Patents by Inventor N. Mark Williams
N. Mark Williams has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9263266Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: June 15, 2015Date of Patent: February 16, 2016Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Publication number: 20150279675Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: June 15, 2015Publication date: October 1, 2015Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Publication number: 20150200256Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: ApplicationFiled: April 4, 2013Publication date: July 16, 2015Applicant: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Patent number: 9082890Abstract: Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.Type: GrantFiled: April 4, 2013Date of Patent: July 14, 2015Assignee: Kyma Technologies, Inc.Inventors: Andrew D. Hanser, Lianghong Liu, Edward Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu
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Patent number: 8871556Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 17, 2013Date of Patent: October 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20140162441Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: December 17, 2013Publication date: June 12, 2014Applicant: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 8637848Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: December 6, 2012Date of Patent: January 28, 2014Assignee: Kyma Technologies, Inc.Inventors: Edward Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 8349711Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: January 27, 2011Date of Patent: January 8, 2013Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 8202793Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: GrantFiled: August 12, 2010Date of Patent: June 19, 2012Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20110198590Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: January 27, 2011Publication date: August 18, 2011Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 7897490Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: GrantFiled: November 30, 2006Date of Patent: March 1, 2011Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20110042682Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: ApplicationFiled: August 12, 2010Publication date: February 24, 2011Inventors: Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Publication number: 20100327291Abstract: In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article.Type: ApplicationFiled: November 30, 2006Publication date: December 30, 2010Applicant: Kyma Technologies, Inc.Inventors: Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 7777217Abstract: In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps.Type: GrantFiled: November 30, 2006Date of Patent: August 17, 2010Assignee: Kyma Technologies, Inc.Inventors: Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams, Xueping Xu
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Patent number: 6787010Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.Type: GrantFiled: November 29, 2001Date of Patent: September 7, 2004Assignee: North Carolina State UniversityInventors: Jerome J. Cuomo, N. Mark Williams
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Patent number: 6784085Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.Type: GrantFiled: November 30, 2001Date of Patent: August 31, 2004Assignee: North Carolina State UniversityInventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Patent number: 6692568Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.Type: GrantFiled: November 30, 2001Date of Patent: February 17, 2004Assignee: Kyma Technologies, Inc.Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Publication number: 20020108847Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.Type: ApplicationFiled: November 29, 2001Publication date: August 15, 2002Inventors: Jerome J. Cuomo, N. Mark Williams
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Publication number: 20020086534Abstract: A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group IIl nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.Type: ApplicationFiled: November 30, 2001Publication date: July 4, 2002Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas
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Publication number: 20020078881Abstract: A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials.Type: ApplicationFiled: November 30, 2001Publication date: June 27, 2002Inventors: Jerome J. Cuomo, N. Mark Williams, Andrew David Hanser, Eric Porter Carlson, Darin Taze Thomas