Abstract: The present invention relates to a novel compound exhibiting anti-inflammatory activity, and the compound of the present invention plays a key role in the generation of pro-inflammatory cytokines, thereby having excellent inhibitory activity against p38 MAPK, which is known to cause inflammatory diseases, and thus can be effectively used as an agent for treating inflammatory diseases.

Abstract: A method, performed by a dialogue processing device, of processing dialogue associated with a user based on dialog act information, the method comprises receiving speech information, corresponding to speech of the user, including a plurality of sentence units; identifying a first sentence unit and a second sentence unit, of the plurality of sentence units, based on receiving the speech information; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; processing the first sentence unit and the second unit in a sequence according to respective priority orders assigned based on a number of empty slots of dialogue frames of the sentence units.

Abstract: The present invention provides a production method of copper-carbon nanofibers, which can realize oxidation-resistant characteristics and process simplification, the production method comprising the steps of: forming a metal precursor-organic nanofiber comprising a metal precursor and an organic substance; and forming a metal-carbon nanofiber by performing a selective oxidation heat treatment to the metal precursor-organic nanofiber so as to simultaneously oxidize carbon of the organic substance and reduce the metal precursor to a metal, wherein the metal has a lower oxidation resistance than the carbon; the selective oxidation heat treatment is performed through a singly heat treatment step, not a plurality of heat treatment steps; and metal-carbon nanofibers with different structures may be formed according to the amount of partial oxygen pressure under which the selective oxidation heat treatment is performed.

Abstract: A method, performed by a dialogue processing device, of processing dialogue associated with a user based on dialog act information, the method comprises receiving speech information, corresponding to speech of the user, including a plurality of sentence units; identifying a first sentence unit and a second sentence unit, of the plurality of sentence units, based on receiving the speech information; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; processing the first sentence unit and the second unit in a sequence according to the respective priority orders.

Abstract: Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.

Abstract: Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.

Abstract: In a layout structure of pads and a structure of pad used for a test or wire bonding of a semiconductor device, a size of at least one or more non-wire bonding pads is relatively small as compared with a size of at least one or more pads to be used for wire bonding of the semiconductor device. In the pad structure, a pad includes a wire bonding region that has an embossed surface for a portion of top metal layer within a determined pad size to improve the bonding process, and a probe tip contact region that does not have the embossed surface for a surface portion of the top metal layer within the determined pad size, so as to reduce wear of probe tip during testing of the device. Pad pitch can thereby be increased within a limited region, and peripheral circuits can be further formed in regions that would have been occupied in a conventional pad formation region. Higher integration of semiconductor devices and reduced wear of probe tip in probing is thereby realized.

Abstract: In a layout structure of pads and a structure of pad used for a test or wire bonding of a semiconductor device, a size of at least one or more non-wire bonding pads is relatively small as compared with a size of at least one or more pads to be used for wire bonding of the semiconductor device. In the pad structure, a pad includes a wire bonding region that has an embossed surface for a portion of top metal layer within a determined pad size to improve the bonding process, and a probe tip contact region that does not have the embossed surface for a surface portion of the top metal layer within the determined pad size, so as to reduce wear of probe tip during testing of the device. Pad pitch can thereby be increased within a limited region, and peripheral circuits can be further formed in regions that would have been occupied in a conventional pad formation region. Higher integration of semiconductor devices and reduced wear of probe tip in probing is thereby realized.