Patents by Inventor Narak Choi

Narak Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTICAL PROXIMITY CORRECTION METHOD AND METHOD OF MANUFACTURING EXTREME ULTRAVIOLET MASK BY USING THE SAME
    Publication number: 20220413377
    Abstract: An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.
    Type: Application
    Filed: February 18, 2022
    Publication date: December 29, 2022
    Inventors: Narak Choi, Dongwon Kang
  • Optical proximity correction (OPC) methods and methods of manufacturing masks using the OPC methods
    Patent number: 11169437
    Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: November 9, 2021
    Inventors: Sangchul Yeo, Narak Choi
  • OPTICAL PROXIMITY CORRECTION (OPC) METHODS AND METHODS OF MANUFACTURING MASKS USING THE OPC METHODS
    Publication number: 20210072637
    Abstract: An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.
    Type: Application
    Filed: April 15, 2020
    Publication date: March 11, 2021
    Inventors: Sangchul Yeo, Narak Choi
  • Semiconductor devices having shielding pattern
    Patent number: 9461003
    Abstract: A semiconductor device includes a circuit pattern on a substrate, a shielding pattern on the circuit pattern and constituted by a plurality of parallel bars, and lower overlay marking on the shielding pattern and constituted by a plurality of parallel bars which define parallel slits between the bars. The pitch of the bars of the shielding pattern is smaller than the pitch of the bars of the lower overlay marking.
    Type: Grant
    Filed: January 14, 2016
    Date of Patent: October 4, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jimyung Kim, Yigwon Kim, Suhyun Kim, Kwangsub Yoon, Bumjoon Youn, Narak Choi