Patents by Inventor Nabil Akel

Nabil Akel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circuits and methods for gate overdrive in GaN power stages
    Patent number: 12640730
    Abstract: A circuit is disclosed. The circuit includes a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal, a driver circuit having an output terminal coupled to the gate terminal, where the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predetermined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time. In one aspect, the second voltage is greater than the first voltage.
    Type: Grant
    Filed: June 4, 2024
    Date of Patent: May 26, 2026
    Assignee: Navitas Semiconductor Limited
    Inventors: Nabil Akel, Jason Zhang, Victor Sinow, Thomas Ribarich
  • CIRCUITS AND METHODS FOR GATE OVERDRIVE IN GAN POWER STAGES
    Publication number: 20240405764
    Abstract: A circuit is disclosed. The circuit includes a gallium nitride (GaN) switch having a gate terminal, a drain terminal and a source terminal, a driver circuit having an output terminal coupled to the gate terminal, where the driver circuit is arranged to generate an output voltage at the output terminal such that: the output voltage is at a first voltage when a voltage at the drain terminal is below a predetermined voltage; the output voltage is at a second voltage when 1) the voltage at the drain terminal is above the predetermined voltage and 2) a time period during which the output voltage is at the second voltage is less than a predetermined time. In one aspect, the second voltage is greater than the first voltage.
    Type: Application
    Filed: June 4, 2024
    Publication date: December 5, 2024
    Applicant: Navitas Semiconductor Limited
    Inventors: Nabil Akel, Jason Zhang, Victor Sinow, Thomas Ribarich