Abstract: A method of forming a shaped abrasive particle includes having a body formed by an additive manufacturing process.

Abstract: A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of: deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, the layer including areas resulting from the growth of basal facets, and areas resulting from the growth of facets of different orientations, called non-basal facets; supply of an n-dopant gas including a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3.

Abstract: The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.

Abstract: A glass furnace including an additive-containing product including an additive selected from: phosphorus compounds other than glasses and vitroceramics, tungsten compounds other than glasses and vitroceramics, molybdenum compounds other than glasses and vitroceramics, iron in the form of metal, aluminum in the form of metal, silicon in the form of metal, and their mixtures, silicon carbide, boron carbide, silicon nitride, boron nitride, glasses including elemental phosphorus and/or iron and/or tungsten and/or molybdenum, vitroceramics including elemental phosphorus and/or iron and/or tungsten and/or molybdenum, and their mixtures, and having the following chemical analysis, exclusively of the additive, as a percentage by weight on the basis of the oxides: Cr2O3?2%, and Cr2O3+Al2O3+CaO+ZrO2+MgO+Fe2O3+SiO2+TiO2?90%, and Cr2O3+Al2O3+MgO?60%, the content by weight of additive being in the range 0.01% to 6%.

Abstract: The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.

Abstract: The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, charaterized in that the variation in crstalline off-cut angle in the largest dimension of said wafer is less than 5×10?3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10?3mm/mm of the largest dimension of said wafer.

Abstract: A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of: deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, the layer including areas resulting from the growth of basal facets, and areas resulting from the growth of facets of different orientations, called non-basal facets; supply of an n-dopant gas including a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3.

Abstract: Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I?), bromide (Br?), fluoride (F?), sulfate (SO42?), sulfide (S2?), sulfite (SO32?), chloride (Cl?), silicate (SiO44?), phosphate (PO43?), nitrate (NO3?), carbonate (CO32?), perchlorate (ClO4?), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MaFx, NbFx, MaNbFx, MaIx, NbIx, MaNbIx, MaBrx, NbBrx, MaNbBrx, Ma(SO4)x, Nb(SO4)x, MaNb(SO4)x, MaSx, NbSx, MaNbSx, Ma(SiO4)x, Nb(SiO4)x, MaNb(SiO4)x, Ma(PO4)x, Nb(PO4)x, MaNb(PO4)x, Ma(NO3)x, Nb(NO3)x, MaNb(NO3)x, Ma(CO3)x, Nb(CO3)x, MaNb(CO3)x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

Abstract: A method of forming a shaped abrasive particle includes having a body formed by an additive manufacturing process.

Abstract: A surface modified nitride particle including a nitride particle covalently bonded via a urethane moiety to an aromatic compound. The surface modified nitride particle may further include at least two auxiliary moieties for bonding to oligomers.

Abstract: A method of forming a shaped abrasive particle having a body formed by an additive manufacturing process.

Abstract: Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

Abstract: Fused grains, in which the grains include a matrix of the zirconia-spinel eutectic coating inclusions composed essentially of a zirconia phase or of a spinel phase, the grains exhibit the following overall chemical composition, as percentages by weight expressed in the form of oxides: more than 45.0% and less than 95.0% of ZrO2, more than 3.0% and less than 40.0% of Al2O3, more than 1.0% and less than 20.0% of MgO, wherein ZrO2, Al2O3 and MgO together represent at least 95.0% of the weight of the grains.

Abstract: A composition can comprise a carrier including a liquid and an abrasive particulate contained in the carrier, the abrasive particulate having, on average, at least 10 wt % cerium oxide in the abrasive particulate and a cerium 3+ ratio (Ce 3+/total cerium) of at least 0.1. In another embodiment, a slurry composition can comprise a liquid carrier comprising water, cerium oxide particles, and free silicate ions, wherein a material removal rate when polishing a silicon oxide wafer can be is increased by at least 3% in comparison to a slurry composition not including free silicate ions.

Abstract: A powder essentially composed of aggregates based on boron nitride, the powder exhibiting an overall chemical composition, as percentages by weight, including between 40 and 45% of boron, between 53 and 57% of nitrogen, less than 400 ppm by weight of calcium, less than 5 %, in total, of other elements and more than 90% of boron nitride, limit included, as percentage by weight and on the basis of the combined crystalline phases, a mean circularity of greater than or equal to 0.90, a median pore size of less than or equal to 1.5 ?m and an apparent porosity of less than or equal to 55%.

Abstract: A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I?), bromide (Br?), fluoride (F?), sulfate (SO42?), sulfide (S2?), sulfite (SO32?), chloride (Cl?), silicate (SiO44?), phosphate (PO43?), nitrate (NO3?), carbonate (CO32?), perchlorate (ClO4?), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MaFx, NbFx, MaNbFx, MaIx, NbIx, MaNbIx, MaBrx, NbBrx, MaNbBrx, Ma(SO4)x, Nb(SO4)x, MaNb(SO4)x, MaSx, NbSx, MaNbSx, Ma(SiO4)x, Nb(SiO4)x, MaNb(SiO4)x, Ma(PO4)x, Nb(PO4)x, MaNb(PO4)x, Ma(NO3)x, Nb(NO3)x, MaNb(NO3)x, Ma(CO3)x, Nb(CO3)x, MaNb(CO3)x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

Abstract: Disclosed are methods for forming boron nitride-containing aggregates that exhibit improved wear by attrition, and resulting filled polymers that exhibit significantly improved thermal conductivity. The boron nitride-containing aggregates are prepared according to a method that includes wet granulating boron nitride powder with a granulation solution to form wet boron nitride-containing granules; and drying the wet boron nitride-containing granules to cause evaporation of solvent in the granulation solution, thereby forming boron nitride-containing granules. Sintering achieves the desired boron nitride-containing aggregates.

Abstract: A method of forming a shaped abrasive particle having a body formed by an additive manufacturing process.