Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.

Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.

Abstract: A light patterning system comprises an illumination system that supplies a beam of radiation having a certain wavelength (?). An array of reflective pixels patterns the beam, wherein the array includes pixels having at least a first tilting mirror that is logically coupled to a second tilting mirror. In an embodiment, the first and second tilting mirrors are (i) substantially adjacent to each other; and (ii) offset in height from each other by a first mirror displacement. A projection system is included that projects the patterned beam onto a target. In alternate embodiment, the array of reflective pixels includes pixels having first through fourth tilting mirrors that are logically coupled to each other. The first through fourth tilting mirrors are (i) respectively offset in height from a reference plane by first through fourth mirror displacements, and (ii) are respectively arranged clockwise in a substantially square pattern.

Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: A method and system for preparing data to be used by a patterning device. The method including the following steps: a first set of graytones for a set of pixels is calculated, the first set of graytones corresponding to a center of a pattern being located at a first grid position, and a second set of graytones for the set of pixels is calculated, the second set of graytones corresponding to the center of the pattern being located at a second grid position. A plurality of sets of graytones for the set of pixels is linearly interpolated with constraints, from the first and second set of graytones, the plurality of sets of graytones corresponding to the pattern being shifted by a continuous shift-amount between the first grid position and the second grid position.

Abstract: A tilting mirror design for maskless lithography is proposed. In this mirror, the tilting portion occupies about 60% of the entire element area. The surrounding space is made 100% reflective and out-of-phase with respect to the tilting portion. The ratio between the tilting portion of the mirror and the out-of-phase portion is optimized in order to result in equal positive and negative maximum amplitudes over a complete range of tilt angles.

Abstract: The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.

Abstract: A light patterning system comprises an illumination system that supplies a beam of radiation having a certain wavelength (?). An array of reflective pixels patterns the beam, wherein the array includes pixels having at least a first tilting mirror that is logically coupled to a second tilting mirror. In an embodiment, the first and second tilting mirrors are (i) substantially adjacent to each other; and (ii) offset in height from each other by a first mirror displacement. A projection system is included that projects the patterned beam onto a target. In alternate embodiment, the array of reflective pixels includes pixels having first through fourth tilting mirrors that are logically coupled to each other. The first through fourth tilting mirrors are (i) respectively offset in height from a reference plane by first through fourth mirror displacements, and (ii) are respectively arranged clockwise in a substantially square pattern.

Abstract: Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.

Abstract: A method and system for preparing data to be used by a patterning device. The method including the following steps: a first set of graytones for a set of pixels is calculated, the first set of graytones corresponding to a center of a pattern being located at a first grid position, and a second set of graytones for the set of pixels is calculated, the second set of graytones corresponding to the center of the pattern being located at a second grid position. A plurality of sets of graytones for the set of pixels is linearly interpolated with constraints, from the first and second set of graytones, the plurality of sets of graytones corresponding to the pattern being shifted by a continuous shift-amount between the first grid position and the second grid position.

Abstract: The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.

Abstract: A tilting mirror design for maskless lithography is proposed. In this mirror, the tilting portion occupies about 60% of the entire element area. The surrounding space is made 100% reflective and out-of-phase with respect to the tilting portion. The ratio between the tilting portion of the mirror and the out-of-phase portion is optimized in order to result in equal positive and negative maximum amplitudes over a complete range of tilt angles.

Abstract: Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.

Abstract: A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Abstract: Provided is a method and system for developing a lithographic mask layout. The lithographic mask layout is adapted for configuring an array of micro-mirrors in a maskless lithography system. The method includes generating an ideal mask layout representative of image characteristics associated with a desired image. Next, an equivalent mask is produced in accordance with an average intensity of the ideal mask layout.

Abstract: The present invention provides systems and methods for improved lithographic printing with polarized light. In embodiments of the present invention, polarized light (radially or tangentially polarized) is used to illuminate a phase-shift mask (PSM) and produce an exposure beam. A negative photoresist layer is then exposed by light in the exposure beam. A chromeless PSM can be used. In further embodiments of the present invention, radially polarized light is used to illuminate a mask and produce an exposure beam. A positive photoresist layer is then exposed by light in the exposure beam. The mask can be an attenuating PSM or binary mask. A very high image quality is obtained even when printing contact holes at various pitches in low k applications.