Patents by Inventor Nacer Badi

Nacer Badi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9318626
    Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: April 19, 2016
    Assignee: THE UNIVERSITY OF HOUSTON
    Inventors: Nacer Badi, Alex Freundlich, Abdelhak Bensaoula, Andenet Alemu
  • Publication number: 20140230893
    Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.
    Type: Application
    Filed: April 23, 2014
    Publication date: August 21, 2014
    Applicant: The University of Houston
    Inventors: Nacer Badi, Alex Freundlich, Abdelhak Bensaoula, Andenet Alemu
  • Patent number: 8716595
    Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: May 6, 2014
    Assignee: The University of Houston
    Inventors: Nacer Badi, Alex Freundlich, Abdelhak Bensaoula, Andenet Alemu
  • Publication number: 20100157509
    Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode and a second conductor to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron oxynitride, BON. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode by means of the first and second conductors.
    Type: Application
    Filed: December 20, 2008
    Publication date: June 24, 2010
    Applicant: Integrated Micro Sensors Inc.
    Inventors: Nacer Badi, Abdelhak Bensaoula
  • Publication number: 20090235981
    Abstract: High performance photovoltaic devices are provided. Certain embodiments relate to the use of Boron-Nitride (BN) thin films as anti-reflection coating (ARC) material on Si and GaAs solar cells. A low and wide reflectance window covering a large energy range of the solar spectrum is available. For a large part of the useful solar spectrum, the index of refraction of the grown BN thin films remains constant at about 2.8. In another embodiment, a BN ARC is applied directly on ordinary window glass providing the device's mechanical strength.
    Type: Application
    Filed: March 24, 2009
    Publication date: September 24, 2009
    Inventors: Nacer Badi, Alex Freundlich, Abdelhak Bensaoula, Andernet Alemu
  • Patent number: 6939775
    Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied by means of the first and second conductors.
    Type: Grant
    Filed: May 27, 2003
    Date of Patent: September 6, 2005
    Assignee: University of Houston
    Inventors: Abdelhak Bensaoula, Nacer Badi
  • Publication number: 20050125976
    Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied by means of the first and second conductors.
    Type: Application
    Filed: May 27, 2003
    Publication date: June 16, 2005
    Inventors: Abdelhak Bensaoula, Nacer Badi
  • Patent number: 6570753
    Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied be means of the first and second conductors.
    Type: Grant
    Filed: May 25, 2001
    Date of Patent: May 27, 2003
    Assignee: University of Houston
    Inventors: Abdelhak Bensaoula, Nacer Badi
  • Publication number: 20030035261
    Abstract: A method for storing energy in a capacitor includes connecting a first conductor to a first electrode. A second conductor is connected to a second electrode. The second electrode is separated from the first electrode by a dielectric layer. The dielectric layer includes a layer of boron nitride, BN. The conductivity of the dielectric layer is lower than the conductivity of the first electrode or the second electrode. A voltage of at least 5 volts is applied between the first electrode and the second electrode. The voltage is applied be means of the first and second conductors.
    Type: Application
    Filed: May 25, 2001
    Publication date: February 20, 2003
    Inventors: Abdelhak Bensaoula, Nacer Badi