Abstract: The present application relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer, while pressing the substrate against a polishing surface of a polishing pad, and more particularly to a polishing method and a polishing apparatus for polishing a substrate while regulating a polishing load based on measurement values of a film-thickness measuring device. The polishing method includes: controlling a temperature of a polishing surface of a polishing pad to a predetermined temperature by use of a pad-temperature regulating apparatus; and polishing a substrate while controlling a polishing load for pressing the substrate against the polishing surface based on measurement values from a film-thickness measuring device provided in the polishing pad.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Abstract: A method of producing a model capable of reducing an influence of spectral variation of reflected light from a workpiece, such as a wafer, and capable of determining an accurate film thickness is disclosed. The method includes: determining sample features representing features of sample spectra of reflected lights from a sample having a film; obtaining similarities by calculating a similarity between each of the sample spectra and a representative spectrum; and producing a film-thickness estimation model by performing machine leaning using training data including the sample features, the similarities, and film thicknesses corresponding to the sample spectra.

Abstract: A polishing method capable of measuring a film thickness of a substrate, such as a semiconductor wafer, having various structural elements on its surface with high accuracy is disclosed. The polishing method includes: generating spectra of reflected lights from measurement points on a substrate; classifying the spectra based on a shape of each spectrum into primary spectra belonging to a first group and a secondary spectrum belonging to a second group; determining film thicknesses of the substrate from the primary spectra; and determining a film thickness at a measurement point corresponding to the secondary spectrum using the primary spectra or the film thicknesses.

Abstract: A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.