Patents by Inventor Nachimuthu Senguttuvan

Nachimuthu Senguttuvan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7785416
    Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: August 31, 2010
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
  • Publication number: 20080173234
    Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.
    Type: Application
    Filed: January 3, 2008
    Publication date: July 24, 2008
    Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
  • Patent number: 7399360
    Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: July 15, 2008
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
  • Patent number: 7282161
    Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500.
    Type: Grant
    Filed: January 19, 2005
    Date of Patent: October 16, 2007
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Kazuhisa Kurashige, Hiroyuki Ishibashi, Keiji Sumiya, Nachimuthu Senguttuvan, Kazuhiro Yoshida, Naoaki Shimura
  • Publication number: 20060174822
    Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.
    Type: Application
    Filed: June 18, 2004
    Publication date: August 10, 2006
    Inventors: Keiji Sumiya, Nachimuthu Senguttuvan, Hiroyuki Ishibashi
  • Publication number: 20050173676
    Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500 ??(1)
    Type: Application
    Filed: January 19, 2005
    Publication date: August 11, 2005
    Inventors: Kazuhisa Kurashige, Hiroyuki Ishibashi, Keiji Sumiya, Nachimuthu Senguttuvan, Kazhuhiro Yoshida, Naoaki Shimura
  • Patent number: 6926847
    Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: August 9, 2005
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Keiji Sumiya, Hiroyuki Ishibashi, Nachimuthu Senguttuvan
  • Publication number: 20040021129
    Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.
    Type: Application
    Filed: July 18, 2003
    Publication date: February 5, 2004
    Applicant: Hitachi Chemical Co., Ltd.
    Inventors: Keiji Sumiya, Hiroyuki Ishibashi, Nachimuthu Senguttuvan
  • Publication number: 20030062486
    Abstract: To provide a neutron scintillator, which does not contain a heavy element, which is absolutely necessary in realizing a scintillation detector having low sensitivity to gamma ray and fully capable of counting high intensity neutron, Cu is doped in oxide comprised of Li and B. The oxide comprised of Li and B is a transparent single crystal having composition ratio of Li2B4O7. The neutron scintillator contains Cu by 0.001 to 0.1 wt %. Furthermore, a (001) plane cut off perpendicularly to a growth axis and polished from the single crystal whose orientation has been grown in a <001> axis is made to be a scintillator plate crystal.
    Type: Application
    Filed: September 13, 2002
    Publication date: April 3, 2003
    Inventors: Hirohiko M. Shimizu, Takayuki Oku, Tomohiro Adachi, Kenji Sakai, Hiroyuki Ishibashi, Kenzou Susa, Nachimuthu Senguttuvan, Mitsuru Ishii, Masaaki Kobayashi