Patents by Inventor Nackieb M. Kamin
Nackieb M. Kamin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230111275Abstract: A differential amplifier includes an unmatched pair, including first quantum dots and second quantum dots, and a matched pair, including first and second phototransistors. The unmatched pair has a difference between a first spectrum absorbed by the first quantum dots and a second spectrum absorbed by the second quantum dots. Each of the first and second phototransistors includes a channel. The first quantum dots absorb the first spectrum from incident electromagnetic radiation and gate a first current through the channel of the first phototransistor, and the second quantum dots absorb the second spectrum from the incident electromagnetic radiation and gate a second current through the channel of the second phototransistor. The first and second phototransistors are coupled together for generating a differential output from the first and second currents, the differential output corresponding to the difference between the first and second spectrums within the incident electromagnetic radiation.Type: ApplicationFiled: October 12, 2021Publication date: April 13, 2023Inventors: Cody K. Hayashi, Carlos M. Torres, JR., Richard C. Ordonez, Nackieb M. Kamin, David Garmire
-
Publication number: 20200340854Abstract: A plasmonic transducer includes a fluidic network layer, a carbon-based substrate, a liquid metal and an electromagnetic system. The fluidic network layer has a fluidic network layer front, a fluidic network layer back, a first through-hole passing from the fluidic network layer front to the fluidic network layer back. The carbon-based substrate is disposed on the fluidic network layer back. The liquid metal is disposed in the first through-hole. The electromagnetic system is operable to change the liquid metal from a first liquid metal state to a second liquid metal state. The transducer is operable to provide a first output signal when the liquid metal is in the first liquid metal state. The transducer is operable to provide a second output signal when the liquid metal is in the second liquid metal state.Type: ApplicationFiled: April 24, 2019Publication date: October 29, 2020Applicant: United States of America as represented by Secretary of the NavyInventors: Cody K. Hayashi, Richard C. Ordonez, Nackieb M. Kamin, David Garmire
-
Patent number: 10801885Abstract: A plasmonic transducer includes a fluidic network layer, a carbon-based substrate, a liquid metal and an electromagnetic system. The fluidic network layer has a fluidic network layer front, a fluidic network layer back, a first through-hole passing from the fluidic network layer front to the fluidic network layer back. The carbon-based substrate is disposed on the fluidic network layer back. The liquid metal is disposed in the first through-hole. The electromagnetic system is operable to change the liquid metal from a first liquid metal state to a second liquid metal state. The transducer is operable to provide a first output signal when the liquid metal is in the first liquid metal state. The transducer is operable to provide a second output signal when the liquid metal is in the second liquid metal state.Type: GrantFiled: April 24, 2019Date of Patent: October 13, 2020Assignee: United States of America as Represented by the Secretary of the NavyInventors: Cody K. Hayashi, Richard C. Ordonez, Nackieb M. Kamin, David Garmire
-
Publication number: 20190250114Abstract: A detection device detects the presence of a chemical or biological agent in an environment. The detection device includes a metal layer including a plurality of electrodes. The device further includes a graphene layer covering a surface of the metal layer of electrodes and a detection layer connected to the electrodes. Contact of a biological or chemical agent with a surface of the graphene layer causes a change in resistance of the graphene layer. The detection layer includes detection circuitry configured to detect the change in resistance as a function of a measured change in a current or voltage between adjacent electrodes.Type: ApplicationFiled: February 12, 2018Publication date: August 15, 2019Inventors: Nackieb M. Kamin, Marcio Calixto de Andrade, David Garmire, Richard Christopher Ordonez
-
Patent number: 10307803Abstract: A system and method are disclosed for cleanliness of transmission windows for directed energy devices. A positive pressure gas chamber is fixed to the transmission window of a directed energy device, e.g., a laser or high power microwave. A gas source is connected to the positive pressure chamber in order to provide pressurized gas. The gas flows into the positive pressure chamber, and exits the positive pressure chamber through openings, thus pushing particulates out of the positive pressure chamber. The gas continues to flow during directed energy use, thus preventing undesirable material, e.g., dirt and moisture, from depositing on the transmission window.Type: GrantFiled: July 20, 2016Date of Patent: June 4, 2019Assignee: The United States of America as represented by Secretary of the NavyInventors: Frank Joseph Bantell, Nackieb M. Kamin
-
Publication number: 20190051553Abstract: A method of fabricating a graphene device generally involving depositing a graphene monolayer from a carbon source on a metal catalyst layer; depositing a transfer substrate on the graphene monolayer by way of casting, thereby forming a transfer-substrate/graphene/metal-catalyst structure; annealing the transfer-substrate/graphene/metal-catalyst structure, thereby forming an annealed transfer-substrate/graphene/metal-catalyst structure; coupling a thermal adhesive with the transfer-substrate/graphene/metal-catalyst structure; moving the annealed transfer-substrate/graphene/metal-catalyst structure to a target area of a target device, by using a probe assembly or the like, thereby forming an annealed transfer-substrate/graphene/metal-catalyst/thermal-adhesive/target-device structure; releasing the slip of thermal adhesive from the annealed transfer-substrate/graphene/metal-catalyst thermal-adhesive/target-device structure by applying heat, thereby forming an annealed transfer-substrate/graphene/metal-catalyst/Type: ApplicationFiled: August 11, 2017Publication date: February 14, 2019Applicant: United States of America as represented by Secretary of the NavyInventors: Nackieb M. Kamin, Marcio C. de Andrade, David Garmire, Richard C. Ordonez
-
Patent number: 9997775Abstract: A device includes an electrolyte disposed between a layer of graphene and liquid metal. A system based upon the device includes a substrate having first and second layers of graphene and an enclosure disposed thereon. The enclosure encases the first and second layers of graphene and has a channel formed therein. A first end of the channel is disposed over at least a portion of the first layer of graphene and a second end of the channel is disposed over at least a portion of the second layer of graphene. An electrolyte disposed within the channel. Liquid metal is disposed within the electrolyte such that the liquid metal is separated from the first layer of graphene and the second layer of graphene by the electrolyte. The liquid metal is movable within the electrolyte to reconfigure power delivery to different connected loads.Type: GrantFiled: August 10, 2016Date of Patent: June 12, 2018Assignee: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYInventors: Richard C. Ordonez, Nackieb M. Kamin, David Garmire, Cody K. Hayashi
-
Publication number: 20180021822Abstract: A system and method are disclosed for cleanliness of transmission windows for directed energy devices. A positive pressure gas chamber is fixed to the transmission window of a directed energy device, e.g., a laser or high power microwave. A gas source is connected to the positive pressure chamber in order to provide pressurized gas. The gas flows into the positive pressure chamber, and exits the positive pressure chamber through openings, thus pushing particulates out of the positive pressure chamber. The gas continues to flow during directed energy use, thus preventing undesirable material, e.g., dirt and moisture, from depositing on the transmission window.Type: ApplicationFiled: July 20, 2016Publication date: January 25, 2018Inventors: Frank Joseph Bantell, Nackieb M. Kamin
-
Patent number: 9704964Abstract: A device includes a substrate, a layer of graphene disposed over at least a portion of the substrate, at least one conductive trace proximate to the layer of graphene, one or more liquid metal contacts electrically connecting the layer of graphene and the at least one conductive trace, and an encasing material disposed over and enclosing the liquid metal contacts. The liquid metal contacts are in contact with a portion of the layer of graphene and an adjoining portion of the respective conductive trace. The liquid metal contacts may comprise a eutectic alloy in stable liquid form at between about ?19° C. and about 1300° C., such as a gallium-based alloy. The conductive traces allow for external device connections and may be partially enclosed within the encasing material.Type: GrantFiled: May 26, 2016Date of Patent: July 11, 2017Assignee: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVYInventors: Richard C. Ordonez, Nackieb M. Kamin, David Garmire, Cody K. Hayashi
-
Patent number: 9529953Abstract: A subthreshold standard cell library addresses the energy efficiency of electronic systems, thereby significantly reducing power consumption. Recent energy performance requirements are causing the next-generation system manufacturers to explore approaches to lower power consumption. Subthreshold operation has been examined and implemented in designing ultra-low power standard cell designs that operate beyond the normal modes of operation, with the potential for large energy savings. Operation of CMOS (Complementary Metal Oxide Semiconductor) transistors in the subthreshold regime, where the supply voltage used in operation is orders of magnitude below the normal operating voltage of typical transistors, has proven to be very beneficial for energy constrained systems as it enables minimum energy consumption in Application Specific Integrated Circuits (ASICs).Type: GrantFiled: February 22, 2016Date of Patent: December 27, 2016Assignee: The United States of America, as Represented by the Secretary of the NavyInventors: Nackieb M. Kamin, Gregory Lum, Henry Au
-
Publication number: 20160203243Abstract: A subthreshold standard cell library addresses the energy efficiency of electronic systems, thereby significantly reducing power consumption. Recent energy performance requirements are causing the next-generation system manufacturers to explore approaches to lower power consumption. Subthreshold operation has been examined and implemented in designing ultra-low power standard cell designs that operate beyond the normal modes of operation, with the potential for large energy savings. Operation of CMOS (Complementary Metal Oxide Semiconductor) transistors in the subthreshold regime, where the supply voltage used in operation is orders of magnitude below the normal operating voltage of typical transistors, has proven to be very beneficial for energy constrained systems as it enables minimum energy consumption in Application Specific Integrated Circuits (ASICs).Type: ApplicationFiled: February 22, 2016Publication date: July 14, 2016Applicant: United States of America, as Represented by the Secretary of the NavyInventors: Nackieb M. Kamin, Gregory Lum, Henry Au
-
Publication number: 20160078153Abstract: A subthreshold standard cell library addresses the energy efficiency of electronic systems, thereby significantly reducing power consumption. Recent energy performance requirements are causing the next-generation system manufacturers to explore approaches to lower power consumption. Subthreshold operation has been examined and implemented in designing ultra low power standard cell designs that operate beyond the normal modes of operation, with the potential for large energy savings. Operation of CMOS (Complementary Metal Oxide Semiconductor) transistors in the subthreshold regime, where the supply voltage used in operation is orders of magnitude below the normal operating voltage of typical transistors, has proven to be very beneficial for energy constrained systems as it enables minimum energy consumption in Application Specific Integrated Circuits (ASICs).Type: ApplicationFiled: August 2, 2012Publication date: March 17, 2016Inventors: Nackieb M. Kamin, Gregory Lum, Henry Au
-
Patent number: 8909264Abstract: In one embodiment, a server system is provided for receiving, processing and reporting sensor data from remote sources. The server system comprises a database; a Geographic Information System (GIS) application; and programs for receiving geographic sensor data from the remote sources representative of geospatial-type information through connections to a computer network and to a cellular network transmitted by the remote sources through computer network communication protocols or short message service (SMS) cellular network communication protocols; processing the received geographic sensor data for storage in the database; and displaying the processed geographic sensor data through the GIS application to users via the cellular network or the computer network.Type: GrantFiled: September 27, 2012Date of Patent: December 9, 2014Assignee: The United States of America as represented by the Secretary of the NavyInventors: Evan Y. Higuchi, Nackieb M. Kamin, Adrianne Tom
-
Patent number: 6709976Abstract: The invention describes an improved method of fabricating trench structures. This method enhances trench structure reliability by reducing dielectric breakdown in high voltage applications, for example. The invention uses etching and thermal oxidation techniques to round and smooth the corners at the bottom of the trench structure. The smoothing of the trench corners reduces the electrical fields that cause insulator breakdown.Type: GrantFiled: July 29, 2002Date of Patent: March 23, 2004Assignee: The United States of America as represented by the Secretary of the NavyInventors: Nackieb M. Kamin, Stephen D. Russell, Stanley R. Clayton, Shannon D. Kasa