Abstract: An arrangement for use in a semiconductor component includes a semiconductor body and an edge structure. The semiconductor body having a first face, a second face, a first semiconductor zone of a first conductance type, at least one second semiconductor zone of a second conductance type, and a semiconductor junction formed therebetween running substantially parallel to the first face. The edge structure is laterally adjacent to the second semiconductor zone and includes at least a first trench. The first trench extends in a vertical direction into the semiconductor body and is filled with a dielectric material. The edge structure further includes a third semiconductor zone of the second conductance type, which, at least partially, is adjacent to a face of the at least one trench which faces away from the first face. The edge structure further includes a fourth semiconductor zone of the first conductance type, which is more heavily doped than the first semiconductor zone, and is proximate to the first face.

Abstract: A circuit arrangement configured to drive a load is disclosed herein. The circuit arrangement comprises a first and a second supply potential terminal for application of a first supply potential and a second supply potential. A load terminal is provided between the first and second supply potential for connection of the load. The circuit arrangement further comprises a first transistor component of a first conduction type. The first transistor component includes a load path and a control terminal, with the load path connected between the first supply potential terminal and the load terminal. The circuit arrangement also comprises a freewheeling element. The freewheeling element is provided as a second transistor of a second conduction type connected up as a diode. The second transistor is connected between the load terminal and the second supply potential terminal. The first transistor component and the freewheeling element are integrated in a common semiconductor body.

Abstract: The invention relates to a field effect controllable semiconductor component, comprising a semiconductor body with a first terminal zone and a second terminal zone, a channel zone formed between the two terminal zones, a control electrode, and also a plurality of compensation zones. The semiconductor component furthermore has additional doping zones which are arranged in spatial proximity to the compensation zones or in a manner merged therewith. The additional doping zones are connected to the first terminal zone, if appropriate via a series diode.