Patents by Inventor Nadav Snir

Nadav Snir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11700028
    Abstract: A TX/RX RF switch that may include a reception path; and a transmission path that has an antenna port, a transmission input port, and transmission transistors. The transmission transistors have source-bulk connections. The reception path has an antenna port, a reception output port, and reception transistors. The reception path includes a first reception transistor that is closest to the antenna port, out of the reception transistors, and has a source-bulk connection, and at least one other reception transistor that has a bulk-to-ground connection. The reception transistors and the transmission transistors are CMOS transistors.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: July 11, 2023
    Assignee: DSP Group Ltd.
    Inventors: Sergey Anderson, Nadav Snir
  • Patent number: 11277902
    Abstract: A novel and useful a single layer RFIC/MMIC structure including a package and related redistribution layer (RDL) based low loss grounded coplanar transmission line. The structure includes a package molded around an RF circuit die with a single redistribution layer (RDL) fabricated on the surface thereof mounted on an RF printed circuit board (PCB) via a plurality of solder balls. Coplanar transmission lines are fabricated on the RDL to conduct RF output signals from the die to PCB signal solder balls. The signal trace transition to the solder balls are funnel shaped to minimize insertion loss and maximize RF isolation between channels. A conductive ground shield is fabricated on the single RDL and operative to shield the plurality of coplanar transmission lines.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: March 15, 2022
    Inventors: Nadav Snir, Konstantin Trotskovsky, Assaf Stav
  • Publication number: 20210368615
    Abstract: A novel and useful a single layer RFIC/MMIC structure including a package and related redistribution layer (RDL) based low loss grounded coplanar transmission line. The structure includes a package molded around an RF circuit die with a single redistribution layer (RDL) fabricated on the surface thereof mounted on an RF printed circuit board (PCB) via a plurality of solder balls. Coplanar transmission lines are fabricated on the RDL to conduct RF output signals from the die to PCB signal solder balls. The signal trace transition to the solder balls are funnel shaped to minimize insertion loss and maximize RF isolation between channels. A conductive ground shield is fabricated on the single RDL and operative to shield the plurality of coplanar transmission lines.
    Type: Application
    Filed: April 13, 2021
    Publication date: November 25, 2021
    Inventors: Nadav Snir, Konstantin Trotskovsky, Assaf Stav
  • Publication number: 20210266032
    Abstract: A TX/RX RF switch that may include a reception path; and a transmission path that has an antenna port, a transmission input port, and transmission transistors. The transmission transistors have source-bulk connections. The reception path has an antenna port, a reception output port, and reception transistors. The reception path includes a first reception transistor that is closest to the antenna port, out of the reception transistors, and has a source-bulk connection, and at least one other reception transistor that has a bulk-to-ground connection. The reception transistors and the transmission transistors are CMOS transistors.
    Type: Application
    Filed: January 4, 2021
    Publication date: August 26, 2021
    Applicant: DSP Group Ltd.
    Inventors: Sergey Anderson, Nadav SNIR
  • Patent number: 10615751
    Abstract: An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: April 7, 2020
    Assignee: DSP Group Ltd.
    Inventors: Sergey Anderson, Nadav Snir
  • Publication number: 20190058445
    Abstract: An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal.
    Type: Application
    Filed: August 2, 2018
    Publication date: February 21, 2019
    Inventors: Sergey Anderson, Nadav Snir