Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A system and method for monitoring a manufacturing process of a fan-out wafer, the method may include acquiring a first set of images of dies after a completion of a first manufacturing stage of a manufacturing process of the fan-out wafer; processing the first set of images to detect defects; performing at least one corrective operation in response to at least one defect detected by processing the first set of images; acquiring a second set of images of dies after a completion of a second manufacturing stage of the manufacturing process of the fan-out wafer, the second manufacturing process follows the first manufacturing process; processing the second set of images to detect defects; and performing at least one corrective operation in response to at least one defect detected by processing the second set of images.

Abstract: The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.

Abstract: A system and method for monitoring a manufacturing process of a fan-out wafer, the method may include acquiring a first set of images of dies after a completion of a first manufacturing stage of a manufacturing process of the fan-out wafer; processing the first set of images to detect defects; performing at least one corrective operation in response to at least one defect detected by processing the first set of images; acquiring a second set of images of dies after a completion of a second manufacturing stage of the manufacturing process of the fan-out wafer, the second manufacturing process follows the first manufacturing process; processing the second set of images to detect defects; and performing at least one corrective operation in response to at least one defect detected by processing the second set of images.

Abstract: A system and method for evaluating a criticality of a defect. The method may include: obtaining information indicative of at least one spatial relationship between at least one inspected pattern of a layer of a micro-electronic device and an inspected defect; and determining a criticality of the detected defect in response to the obtained information and in response to at least one rule that associates between a criticality of a defect and a spatial relationship between the defect and at least one edge of at least one pattern of a layer of a micro-electronic device.

Abstract: A method for calibrating a metrology tool, the method includes: determining a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; and defining a calibration parameter in response to the relationship. A metrology system that includes: a miller adapted to mill a reference structural element; and a measurement device adapted to determine a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; wherein the metrology system is further adapted to define a calibration parameter in response to the relationship.

Abstract: A method for calibrating a metrology tool, the method includes: determining a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; and defining a calibration parameter in response to the relationship. A metrology system that includes: a miller adapted to mill a reference structural element; and a measurement device adapted to determine a relationship between an upper portion of a milled reference structural element and between a lower portion of the milled reference structural element; wherein the metrology system is further adapted to define a calibration parameter in response to the relationship.