Patents by Inventor Nadeemmullah A. Mahadik

Nadeemmullah A. Mahadik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN
    Patent number: 10937649
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 2, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
    Patent number: 10256090
    Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch process
    Patent number: 10256094
    Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
    Patent number: 9773666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: September 26, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B Qadri, Michael J. Mehl
  • Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys with AlN and GaN
    Publication number: 20150140789
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N
    Type: Application
    Filed: December 16, 2014
    Publication date: May 21, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS
    Publication number: 20140190399
    Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
    Type: Application
    Filed: March 11, 2014
    Publication date: July 10, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS
    Publication number: 20140193965
    Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
    Type: Application
    Filed: March 11, 2014
    Publication date: July 10, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and its alloys with AlN at Low Temperatures
    Publication number: 20130334666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 13, 2013
    Publication date: December 19, 2013
    Applicant: The Government of the United Stated of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl