Patents by Inventor Nadia M. Rahhai-Orabi

Nadia M. Rahhai-Orabi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned contacts
    Patent number: 9466565
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: October 11, 2016
    Assignee: Intel Corporation
    Inventors: Mark T Bohr, Tahir Ghani, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • SELF-ALIGNED CONTACTS
    Publication number: 20150270216
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: June 4, 2015
    Publication date: September 24, 2015
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • Self-aligned contacts
    Patent number: 9054178
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: June 9, 2015
    Assignee: Intel Corporation
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz
  • SELF-ALIGNED CONTACTS
    Publication number: 20140151817
    Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.
    Type: Application
    Filed: February 6, 2014
    Publication date: June 5, 2014
    Inventors: Mark T. Bohr, Tahir Ghani, Nadia M. Rahhai-Orabi, Subhash M. Joshi, Joseph M. Steigerwald, Jason W. Klaus, Jack Hwang, Ryan Mackiewicz