Patents by Inventor Nadim Chowdhurry

Nadim Chowdhurry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11211482
    Abstract: An AND-gate device having a structure arms, a channel from a first arm and a second arm extends to a channel of a third arm. When a current from a first voltage flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of electrons is generated that flows through the third arm channel from the channel of the first and second arms to the third arm channel. At least two input structures are positioned in series in the third arm. Each input structure includes a fin structure having a gate controlled by an individual voltage applied to an electrode which induces an electric-field structure that shifts by an amount of the voltage. The controllable gate opening changes a depletion width, causing an amount of flow of ballistic electrons to pass through the channel. A sensor detects the ballistic electrons.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: December 28, 2021
    Assignee: Mitsubishi Electric Research laboratories, Inc.
    Inventors: Koon Hoo Teo, Nadim Chowdhurry
  • Publication number: 20210280701
    Abstract: Semiconductor devices includes third arms. A channel from the first and second arms extends to a channel of the third arm. When a current from a first voltage is flowing from the first arm to the second arm, a flow of ballistic electrons is generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel. A fin structure located in the third arm channel and includes a gate. The gate is controlled using a second voltage over the fin structure, the fin structure is formed to induce an energy-field structure that shifts by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons pass through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.
    Type: Application
    Filed: March 4, 2020
    Publication date: September 9, 2021
    Applicant: Mitsubishi Electric Research Laboratoriesm Inc.
    Inventors: Koon Hoo Teo, Nadim Chowdhurry
  • Publication number: 20210280704
    Abstract: An AND-gate device having a structure arms, a channel from a first arm and a second arm extends to a channel of a third arm. When a current from a first voltage flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of electrons is generated that flows through the third arm channel from the channel of the first and second arms to the third arm channel. At least two input structures are positioned in series in the third arm. Each input structure includes a fin structure having a gate controlled by an individual voltage applied to an electrode which induces an electric-field structure that shifts by an amount of the voltage. The controllable gate opening changes a depletion width, causing an amount of flow of ballistic electrons to pass through the channel. A sensor detects the ballistic electrons.
    Type: Application
    Filed: March 4, 2020
    Publication date: September 9, 2021
    Applicant: Mitsubishi Electric Research laboratories, Inc.
    Inventors: Koon Hoo Teo, Nadim Chowdhurry
  • Patent number: 11056583
    Abstract: An OR-gate device includes two cross shaped structures, each cross shaped structure includes a channel. Where at an end of each channel is an ohmic contact connecting the two cross shaped structures. Each cross shaped structure includes an epitaxial layer including a III-N heterostructure such as InAlN/GaN. Wherein an amount of an In concentration of the InAlN/GaN is tuned to lattice match with GaN, resulting in electron mobility to generate ballistic electrons. A fin structure located in the channel includes a gate formed transversely to a longitudinal axis of the channel. The gate is controlled using a voltage over the fin structure. Wherein the fin structure is formed to induce an energy-field structure that shifts by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference.
    Type: Grant
    Filed: March 4, 2020
    Date of Patent: July 6, 2021
    Assignee: Mitsubishi Electric Research Laboratories, Inc.
    Inventors: koon Hoo Teo, Nadim Chowdhurry