Abstract: Provided is a microfluidic detection device which has a spiral flow path and in which microfluid flows by a capillary phenomenon. The microfluidic detection device includes an upper layer configured to receive a fluid sample through a first inlet portion that protrudes on an upper side of a first substrate, the upper layer having a plurality of flow paths which is provided in a lower side of the first substrate and in which a washing solution moves. Furthermore, the microfluidic detection device includes a lower layer provided with a concave hole in an upper side of a second substrate such that the fluid sample is moved therethrough, the lower layer being configured to receive the fluid sample from a second inlet portion connected to the first inlet portion.

Abstract: Proposed is a microfluidic detection device in which microfluid flows by a capillary phenomenon. The microfluidic detection device includes an upper layer provided with a first inlet part configured to supply a fluid sample, and a middle layer disposed below the upper layer and provided with a second inlet part interlocked with the first inlet part, the middle layer being provided with a plurality of channels forming at least one complex by coupling the fluid sample to each probe. Furthermore, the microfluidic detection device includes a lower layer disposed below the middle layer and provided with a magnet seating part supported by the middle layer and a magnet.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: The present invention provides a random or block polyimide-siloxane copolymer, which may be prepared from a hard amine monomer, a dianhydride monomer, and a soft amine monomer, may have mechanical properties, flexibility, and thermal properties adjusted through the control of soft amine content, and may exhibits high thermal stability, corrosion resistance, transparency and flexibility, and a method for preparing the same. The random or block polyimide-siloxane copolymer, which may be flexible and thermally stable and may exhibits adjustable mechanical properties and skin-like sensory functions, may be applied to flexible electronic devices.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: An electronic device comprises a base substrate changing a cross section area corresponding to an external force applied from outside and a sensor changing a cross section area corresponding to the external force applied from outside. The sensor comprises a first electrode disposed on the base substrate, a second electrode disposed on the base substrate, and a dielectric layer disposed between the first electrode and the second electrode. A thickness of the dielectric layer stays substantially the same when a cross sectional area of the base substrate changes.

Abstract: A capacitor structure includes: a first substrate having a first electrode part provided on one surface thereof; a second substrate having a second electrode part provided on a surface thereof, which faces the first substrate; and a dielectric layer provided between the first substrate and the second substrate, wherein a Poisson's ratio of the first substrate or the second substrate is different from a Poisson's ratio of the dielectric layer. The capacitor structure has a substantially constant capacitance even when the capacitor structure is exposed to external strain.

Abstract: A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.

Abstract: A pressure sensor includes: a base substrate including an embossed pattern; a first conductive layer disposed on the base substrate; a pressure sensitive material layer disposed on the first conductive layer such that its electrical characteristic is varied corresponding to a strain applied thereto, the pressure sensitive material layer including a dielectric and nanoparticles dispersed in the dielectric; and a second conductive layer disposed on the pressure sensitive material layer, wherein the dielectric and the nanoparticle include materials having pyroelectricities of polarities opposite to each other.

Abstract: A capacitor structure includes: a first substrate having a first electrode part provided on one surface thereof; a second substrate having a second electrode part provided on a surface thereof, which faces the first substrate; and a dielectric layer provided between the first substrate and the second substrate, wherein a Poisson's ratio of the first substrate or the second substrate is different from a Poisson's ratio of the dielectric layer. The capacitor structure has a substantially constant capacitance even when the capacitor structure is exposed to external strain.

Abstract: An electronic device comprises a base substrate changing a cross section area corresponding to an external force applied from outside and a sensor changing a cross section area corresponding to the external force applied from outside. The sensor comprises a first electrode disposed on the base substrate, a second electrode disposed on the base substrate, and a dielectric layer disposed between the first electrode and the second electrode. A thickness of the dielectric layer stays substantially the same when a cross sectional area of the base substrate changes.

Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Abstract: There is provided a substrate for a stretchable device, the substrate having a mogul pattern formed thereon, wherein the mogul pattern has a plurality of bumps protruding from a virtual reference plane, and a continuous valley formed between the bumps, wherein the valley surrounds the bumps, and the bumps are regularly or irregularly arranged and have substantially the same size and shape, wherein a combination of the bumps and the valley has a continuous curved surface.

Abstract: A flexible bimodal sensor includes a gate electrode; a flexible substrate; a source electrode disposed on the flexible substrate; a drain electrode disposed on the flexible substrate apart from the source electrode; a channel layer disposed on the source electrode and the drain electrode and a portion of the flexible substrate between the source electrode and the drain electrode; and a gate insulating layer comprising a plurality of protrusions, the gate insulating layer being disposed on the channel layer and arranged between the channel layer and the gate electrode. The drain electrode outputs a current signal simultaneously indicating a temperature value and a pressure value sensed by the flexible bimodal sensor.

Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

Abstract: A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.

Abstract: A method of forming a thin film pattern includes: forming a thin film on a substrate; forming an amorphous carbon layer including first and second carbon layers on the thin film, wherein the first carbon layer is formed by one of a spin-on method and a plasma enhanced chemical vapor deposition (PECVD) method and the second carbon layer is formed by a physical vapor deposition (PVD) method; forming a hard mask layer on the amorphous carbon layer; forming a PR pattern on the hard mask layer; forming a hard mask pattern by etching the hard mask layer using the PR pattern as an etch mask; forming an amorphous carbon pattern including first and second carbon patterns by etching the amorphous carbon layer using the hard mask pattern as an etch mask; and forming a thin film pattern by etching the thin film using the amorphous carbon pattern.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Abstract: The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.