Patents by Inventor Nae Man Park
Nae Man Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11393981Abstract: The present disclosure relates to a method of manufacturing a semiconductor material including a cellulose nanocrystal. Particularly, according to the present disclosure, by attaching an electron withdrawing group to the surface of the cellulose nanocrystal, which is a nonconductor, holes are formed in the doped cellulose nanocrystal, and the cellulose nanocrystal may be used as a semiconductor material.Type: GrantFiled: October 7, 2020Date of Patent: July 19, 2022Assignee: Electronics and Telecommunications Research InstituteInventors: Nae-Man Park, Sukyung Choi, Jee Eun Oh
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Publication number: 20210202855Abstract: The present disclosure relates to a semiconductor material including a cellulose nanocrystal and a manufacturing method thereof. Particularly, according to the present disclosure, by attaching an electron withdrawing group or an electron donating group to the surface of the cellulose nanocrystal which is a nonconductor, holes or free electrons are formed in the cellulose nanocrystal, and the cellulose nanocrystal may be used as a semiconductor material.Type: ApplicationFiled: October 7, 2020Publication date: July 1, 2021Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Nae-Man PARK, Sukyung Choi, Jee Eun Oh
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Publication number: 20180012861Abstract: Provided is a method of manufacturing an electronic apparatus which includes preparing a substrate having a first Young's modulus, disposing a thin film having a second Young's modulus greater than the first Young's modulus on the substrate, disposing an electronic device on the thin film, and disposing a capping layer configured to cover the electronic device on the thin film.Type: ApplicationFiled: June 23, 2017Publication date: January 11, 2018Applicant: Electronics and Telecommunications Research InstituteInventors: Ji-Young OH, Joo Yeon KIM, Jae Bon KOO, Bock Soon NA, Nae-Man PARK, Chan Woo PARK, Sang Seok LEE, Soon Won JUNG, Chi-Sun HWANG, Keunsoo LEE
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Patent number: 8222055Abstract: Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.Type: GrantFiled: November 6, 2009Date of Patent: July 17, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Tae Youb Kim, Nae Man Park, Kyung Hyun Kim, Gun Yong Sung
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Patent number: 8022444Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.Type: GrantFiled: August 20, 2008Date of Patent: September 20, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae Youb Kim, Nae Man Park, Han Young Yu, Moon Gyu Jang, Jong Heon Yang
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Patent number: 7982231Abstract: A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.Type: GrantFiled: April 25, 2006Date of Patent: July 19, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Tae-Youb Kim, Nae-Man Park, Gun-Yong Sung, Jong-Heon Yang
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Patent number: 7791095Abstract: Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.Type: GrantFiled: August 5, 2005Date of Patent: September 7, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Nae Man Park, Kyung Hyun Kim, Tae Youb Kim, Gun Yong Sung
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Patent number: 7772587Abstract: Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far.Type: GrantFiled: March 14, 2006Date of Patent: August 10, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung Hyun Kim, Nae Man Park, Chul Huh, Tae Youb Kim, Jae Heon Shin, Kwan Sik Cho, Gun Yong Sung
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Patent number: 7671377Abstract: Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.Type: GrantFiled: November 14, 2005Date of Patent: March 2, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Tae-Youb Kim, Nae-Man Park, Kyung-Hyun Kim, Gun-Yong Sung
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Publication number: 20100048002Abstract: Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.Type: ApplicationFiled: November 6, 2009Publication date: February 25, 2010Applicant: ELECTRONICS AND TELECOMMUNICATION RESEARCH INSTITUTEInventors: Tae Youb KIM, Nae Man PARK, Kyung Hyun KIM, Gun Yong SUNG
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Publication number: 20090242913Abstract: Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.Type: ApplicationFiled: November 14, 2005Publication date: October 1, 2009Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Tae-Youb Kim, Nae-Man Park, Kyung-Hyun Kim, Gun-Yong Sung
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Publication number: 20090152597Abstract: Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.Type: ApplicationFiled: August 20, 2008Publication date: June 18, 2009Applicant: Electronics and Telecommunications Research InstituteInventors: Tae Youb KIM, Nae Man Park, Han Young Yu, Moon Gyu Jang, Jong Heon Yang
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Publication number: 20090001401Abstract: Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.Type: ApplicationFiled: August 5, 2005Publication date: January 1, 2009Inventors: Nae Man Park, Kyung Hyun Kim, Tae Youb Kim, Gun Yong Sung
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Publication number: 20080303018Abstract: Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far.Type: ApplicationFiled: March 14, 2006Publication date: December 11, 2008Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITInventors: Kyung Hyun Kim, Nae Man Park, Chul Huh, Tae Youb Kim, Jae Heon Shin, Kwan Sik Cho, Gun Yong Sung
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Publication number: 20080296593Abstract: Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid.Type: ApplicationFiled: June 16, 2006Publication date: December 4, 2008Inventors: Nae Man Park, Tae Youb Kim, Gun Yong Sung
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Publication number: 20080290360Abstract: A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror The lateral surface is referred to as the side reflecting mirror.Type: ApplicationFiled: April 25, 2006Publication date: November 27, 2008Applicant: Electronics and Telecommunications Research InstituteInventors: Tae-Youb Kim, Nae-Man Park, Gun-Yong Sung, Jong-Heon Yang
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Patent number: 6998643Abstract: A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.Type: GrantFiled: August 20, 2004Date of Patent: February 14, 2006Assignee: Electronics and Telecommunications Research InstituteInventors: Taeyoub Kim, Nae Man Park, Gun Yong Sung
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Patent number: 6773946Abstract: Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided.Type: GrantFiled: December 30, 2002Date of Patent: August 10, 2004Assignee: Kwagju Institute of Science and TechnologyInventors: Yong Tae Moon, Nae Man Park, Baek Hyun Kim, Seong Ju Park
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Publication number: 20040094756Abstract: Disclosed is a III-nitride compound semiconductor nanophase opto-electronic cell, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nitride semiconductor nanophase opto-electronic cell and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor thin film growth on silicon substrates. Accordingly, a high-quality III-nitride compound semiconductor nanophase opto-electronic cell having no crystalline defect can be provided. Furthermore, the opto-electronic cell according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor opto-electronic cell using III-nitride thin films grown on silicon substrates.Type: ApplicationFiled: December 30, 2002Publication date: May 20, 2004Inventors: Yong Tae Moon, Nae Man Park, Baek Hyun Kim, Seong Ju Park
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Publication number: 20040046499Abstract: There is provided a light-emitting device that increases an emissivity in a light emission layer so as to improve luminous efficiency. The light-emitting device includes a cover layer formed by depositing a material having a high refractive index that is higher than that of the light emission layer. The light-emitting device increases a ratio of the light reflected internally into the light-emitting device to increase a light absorption in the light emission layer, thereby enhancing emissivity in the light emission layer. Therefore, the light-emitting device can enhance the efficiency of it, even when the light emission layer is made of a conventional material, and can satisfy the commercial requirement for a display that is very bright.Type: ApplicationFiled: December 11, 2002Publication date: March 11, 2004Inventors: Nae-Man Park, Sang-Hyeob Kim, Gun-Yong Sung