Abstract: Exemplary semiconductor structures may include a plurality of LED structures and a backplane layer. Exemplary semiconductor structures may also include a light barrier region positioned between the LED structures and the backplane layer. The light barrier region may be operable to absorb light at wavelengths shorter than or about 300 nm and transmit light at wavelengths greater than or about 350.

Abstract: Processing methods are described that include forming a group of LED structures on a substrate layer to form a patterned LED substrate. The methods also include depositing a light absorption material on the pattered LED substrate, where the light absorption material includes at least one photocurable compound and at least one ultraviolet light absorbing material. The methods further include exposing a portion of the light absorption material to patterned light, wherein the patterned light cures the exposed portion of the light absorption material into pixel isolation structures. The methods additionally include depositing an isotropic layer on a top portion and a side portion of the pixel isolation structures, where the LED structures are substantially free of the as-deposited isotropic light reflecting layer.

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

Abstract: Multilayered semiconductor particles, which may be referred to as a quantum dots, may include a zinc-containing core. The particles may include a zinc-and-selenium-containing inner shell on the zinc-containing core. The particles may include a zinc-containing outer shell on the zinc-and-selenium-containing inner shell. The particles may include a phosphorous-containing material in contact with the zinc-containing outer shell. The phosphorous-containing material may be or include triisopropyl phosphite (TIPP), bis(2,4-di-tert-butylphenyl) pentaerythritol diphosphate (B PEDP), tris(2, 4-di-tert-butylphenyl)phosphite (TDTBPP), triethylphosphite, tris(2-ethylhexylphosphite), tris(trimethylsilyl)phosphite, triphenylphosphite, triphenyl phosphine, tris(4-methoxyphenyl)phosphine, tris(1-pyrrolidinyl)phosphine, tri(2-furyl)phosphine, or tris(dimethylamino)phosphine.

Abstract: Micro-LED structures include an LED epilayer that may be formed before the micro-LED structure is coupled to a backplane substrate. In order to prevent light leakage and maximize light output, the sidewalls and other surfaces of the LED epilayer may be coated with a reflective coating. For example, the reflective coating may include a metal layer that is electrically insulated between dielectric layers from the micro-LED electrodes. The reflective coating may also be formed using multiple layers in a distributed Bragg reflector configuration. This reflective coating may be formed during the LED fabrication process before the micro-LED structure is coupled to the backplane. The pixel isolation structures on the backplane may also include a reflective coating that is applied above the LED epilayers.

Abstract: Exemplary device structures may include a light emitting diode structure. The light emitting diode structure may be operable to generate light. The structures may include a photoluminescent region containing a photoluminescent material. The photoluminescent region may be positioned on the light emitting diode structure. The structures may include an ultraviolet (UV) light filter positioned above the photoluminescent region. The UV light filter may be operable to absorb light generated by the light emitting diode structure characterized by an emission wavelength of less than or about 430 nm.

Abstract: Exemplary pixel structures are described that include a first light emitting diode structure, operable to generate blue light characterized by a peak emission wavelength of greater than or about 450 nm, and a second light emitting diode structure positioned on the first light emitting diode structure. The second light emitting diode structure is operable to generate ultraviolet light characterized by a peak emission wavelength of less than or about 380 nm. The pixel structures may also include a photoluminescent region, containing a photoluminescent material, that is positioned on the second light emitting diode structure.

Abstract: Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

Abstract: Methods of making a multilayered semiconductor particle, which may be referred to as a quantum dot, are described. The methods include combining a first zinc-containing compound and a selenium-containing compound to form a ZnSe mixture. The zinc-containing compound and the selenium-containing compound are rapidly combined in less than or about 5 seconds. The methods also include adding a tellurium-containing compound to the ZnSe mixture to form at least one ZnSeTe particle in a ZnSeTe mixture. The methods still further include forming a first shell layer on the ZnSeTe particle and forming a second shell layer on the first shell layer to make the multilayered semiconductor particle. In additional embodiments, the reactant and particle mixtures may be rapidly stirred. The light emitted by the multilayered semiconductor particles may be characterized by an enhanced narrowband emission profile (i.e., sharpness).

Abstract: Exemplary processing methods include forming a group of LED structures on a substrate layer to form a patterned LED substrate. A light absorption barrier may be deposited on the patterned LED substrate. The methods may further include exposing the patterned LED substrate to light. The light may be absorbed by surfaces of the LED structures that are in contact with the substrate layer, and the light absorption barrier. The methods may still further include separating the LED structures for the substrate layer. The bonding between the LED structures and the substrate layer may be weakened by the absorption of the light by the surfaces of the LED structures in contact with the substrate layer.

Abstract: Methods of making high-pixel-density LED structures are described. The methods may include forming a backplane substrate and a LED substrate. The backplane substrate and the LED substrate may be bonded together, and the bonded substrates may include an array of LED pixels. Each of the LED pixels may include a group of isolated subpixels. A quantum dot layer may be formed on at least one of the isolated subpixels in each of the LED pixels. The methods may further include repairing at least one defective LED pixel by forming a replacement quantum dot layer on a quantum-dot-layer-free subpixel in the defective LED pixel. The methods may also include forming a UV barrier layer on the array of LED pixels after the repairing of the at least one defective LED pixel.

Abstract: Exemplary processing methods of forming an LED structure may include depositing an aluminum nitride layer on a substrate via a physical vapor deposition process. The methods may include heating the aluminum nitride layer to a temperature greater than or about 1500° C. The methods may include forming an ultraviolet light emitting diode structure overlying the aluminum nitride layer utilizing a metal-organic chemical vapor deposition or molecular beam epitaxy.

Abstract: Exemplary processing methods of forming an LED structure on a backplane may include coupling a first transfer substrate with an LED source substrate. The LED source substrate may include a plurality of fabricated LEDs. The coupling of the first transfer substrate may be produced with a first coupling material extending between the first transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the LED source substrate from the LEDs. The methods may include coupling a second transfer substrate with the first transfer substrate. The coupling of the first transfer substrate may be produced with a second coupling material extending between the second transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the first transfer substrate from the second transfer substrate. The methods may include bonding the plurality of fabricated LEDs with a display backplane.

Abstract: Exemplary pixel structures may include a pixel structure of a display device panel stack. The structures may include a first panel. The first panel may include a plurality of ultraviolet light sources disposed on a backplane. The structures may also include a second panel. The second panel may be coupled with the first panel. The second panel may have an inner surface facing the ultraviolet light sources. The second panel may include a transparent substrate and a down-conversion layer. The down-conversion layer may be disposed overlying the transparent substrate. The down-conversion layer may be configured to down-convert ultraviolet light into visible light. The plurality of ultraviolet light sources and the inner surface of the second panel may be separated by a distance of at least 2 ?m.

Abstract: In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.

Abstract: In some embodiments, a substrate carrier for holding a plurality of substrates comprises a disk formed of a continuous material to a nominal dimension which is approximately a multiple of a nominal dimension of a standard substrate size used in the manufacture of light emitting diode devices. In an embodiment, the disk is formed symmetrically about a central axis and defines a substantially planar upper surface. A first pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the first pair of pockets are bisected by a first reference plane passing through the central axis. A second pair of pockets is defined in the upper surface of the disk, wherein the disk and each of the second pair of pockets are bisected by a second reference plane passing through the central axis.