Patents by Inventor Nagaboopathy MOHAN

Nagaboopathy MOHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Platform of large metal nitride islands with lateral orientations and low-defect density
    Patent number: 10854719
    Abstract: The present invention provides a metal nitride platform for semiconductor devices, including, a pre-defined array of catalyst sites, disposed on a substrate. Metal nitride islands with lateral to vertical size ratios of at least greater than one (1) are disposed on the array of catalyst sites, where the surfaces of the metal nitride islands are with reduced dislocation densities and side walls with bending of dislocations. The platform of metal nitride islands is further used to build electrically and optically-active devices. The present invention also provides a process for the preparation of a metal nitride platform, selectively, on the array of catalyst sites, in the presence of a reactive gas and precursors and under preferred reaction conditions, to grow metal nitride islands with lateral to vertical size ratios of at least greater than one (1).
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: December 1, 2020
    Assignee: Indian Institute of Science
    Inventors: Srinivasan Raghavan, Hareesh Chandrasekar, Nagaboopathy Mohan, Dhayalan Shakthivel
  • PLATFORM OF LARGE METAL NITRIDE ISLANDS WITH LATERAL ORIENTATIONS AND LOW-DEFECT DENSITY
    Publication number: 20170278932
    Abstract: The present invention provides a metal nitride platform for semiconductor devices, including, a pre-defined array of catalyst sites, disposed on a substrate. Metal nitride islands with lateral to vertical size ratios of at least greater than one (1) are disposed on the array of catalyst sites, where the surfaces of the metal nitride islands are with reduced dislocation densities and side walls with bending of dislocations. The platform of metal nitride islands is further used to build electrically and optically-active devices. The present invention also provides a process for the preparation of a metal nitride platform, selectively, on the array of catalyst sites, in the presence of a reactive gas and precursors and under preferred reaction conditions, to grow metal nitride islands with lateral to vertical size ratios of at least greater than one (1).
    Type: Application
    Filed: March 17, 2017
    Publication date: September 28, 2017
    Inventors: Srinivasan RAGHAVAN, Hareesh CHANDRASEKAR, Nagaboopathy MOHAN, Dhayalan SHAKTHIVEL