Abstract: Processes to produce Silicon-On-Diamond (SOD) Structures. In one process, two epitaxial layers are grown on a seed silicon wafer. The first layer is an etch stop layer and the second layer is an undoped silicon layer. A CVD diamond is deposited on top of this substrate, and covered with a thin layer of polysilicon. This structure is now bonded to another silicon handle wafer. The seed silicon layer and the etch stop layer are removed by mechanical means and chemical etching. The substrate consists of a silicon substrate, a polysilicon layer, a diamond layer and an undoped silicon layer. In a second process a diamond layer is deposited onto a SIMOX Wafer and polysilicon is deposited upon the diamond layer. A silicon wafer is bonded to the polysilicon layer and the SIMOX wafer less the silicon overlayer on the buried oxide is removed by grinding and etching to obtain silicon-on-diamond structure.