Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

Abstract: According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

Abstract: A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion lements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to one embodiment, a substrate for semiconductor devices includes a P-type semiconductor substrate, a P-type or N-type semiconductor layer, and a P-type or N-type epitaxial layer. The P-type or N-type semiconductor layer is provided at a surface layer of the semiconductor substrate and has a resistance value lower than a resistance value of the semiconductor substrate. The P-type or N-type epitaxial layer is provided on a surface of the semiconductor layer and has a resistance value higher than the resistance value of the semiconductor layer.

Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

Abstract: A solid-state imaging device includes a first chip and a second chip. The first chip includes a pixel array in which a plurality of photodiodes corresponding to each pixel of a captured image is disposed in a two-dimensional array shape. Each photodiode generates a pixel signal corresponding to a signal charge generated by the photoelectric conversion of the photodiode. The first chip is stacked on the second chip that includes a memory storing the pixel signals generated from the first chip, where the memory is located outside a projection region formed by projecting the pixel array and in a thickness direction of the first chip.

Abstract: According to one embodiment, a solid-state imaging device including a plurality of pixels two-dimensionally arranged at a preset pitch in a semiconductor substrate is provided. Each of the pixels is configured to include first and second photodiodes that photoelectrically convert incident light and store signal charges obtained by conversion, a first micro-lens that focuses light on the first photodiode, and a second micro-lens that focuses light on the second photodiode. The saturation charge amount of the second photodiode is larger than that of the first photodiode. Further, the aperture of the second micro-lens is smaller than that of the first micro-lens.

Abstract: A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.

Abstract: A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion.

Abstract: According to one embodiment of the present invention, a solid-state imaging device is provided. The solid-state imaging device includes a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first-conductivity-type semiconductor region is disposed for each pixel of a captured image. The second-conductivity-type semiconductor region constitutes a photoelectric conversion element by a PN junction with the first-conductivity-type semiconductor region, and has second-conductivity-type impurity concentration that decreases from the center of the photoelectric conversion element toward a transfer gate side for transferring signal charge.

Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a floating diffusion, and an amplifying transistor. The photoelectric conversion element photoelectrically convert incident light into electric charges with an amount corresponding to an amount of the incident light, and accumulates the electric charges. The floating diffusion accumulates the electric charges read out from the photoelectric conversion element. The amplifying transistor includes a gate electrode connected to the floating diffusion, and outputs a signal based on the amount of the electric charges accumulated in the floating diffusion. The amplifying transistor includes a first concentration region disposed in at least a part of the maximum region of the depletion layer and a second concentration region disposed at a deeper position than the first concentration region, and has higher impurity concentration than that of the first concentration region.

Abstract: According to one embodiment, a solid-state imaging device is provided. The solid-state imaging device includes a photoelectric conversion element, a first anti-reflection film, an intermediate film, and a second anti-reflection film. The photoelectric conversion element is disposed corresponding to each of a plurality of colored lights. The first anti-reflection film is disposed on a photo-receiving surface side of the photoelectric conversion element. The intermediate film is disposed on a photo-receiving surface side of the first anti-reflection film. The second anti-reflection film is disposed on a photo-receiving surface side of the intermediate film. At least one of the first anti-reflection film, the intermediate film, and the second anti-reflection film has different film thicknesses for respective colored lights to be received.

Abstract: According to one embodiment, a solid-state image pickup device includes a pixel array that includes a two-dimensionally arranged matrix of photoelectric conversion elements corresponding to pixels of a picked-up image. Each of the photoelectric conversion elements includes a first conductive semiconductor region and a second conductive semiconductor region between which an uneven junction plane is formed.

Abstract: According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1>QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.

Abstract: A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.

Abstract: According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1>QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.

Abstract: A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.