Patents by Inventor Nagayasu HIRAMATSU
Nagayasu HIRAMATSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11753719Abstract: A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.Type: GrantFiled: March 13, 2019Date of Patent: September 12, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kennan Mo, Kouichi Sekido, Takanobu Hotta, Nagayasu Hiramatsu, Atsushi Matsumoto, Kensaku Narushima
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Patent number: 11629404Abstract: A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.Type: GrantFiled: March 14, 2019Date of Patent: April 18, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kensaku Narushima, Nagayasu Hiramatsu, Atsushi Matsumoto, Takanobu Hotta
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Patent number: 11069512Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.Type: GrantFiled: August 8, 2017Date of Patent: July 20, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shinya Okabe, Takashi Mochizuki, Hideaki Yamasaki, Nagayasu Hiramatsu, Kazuki Dempoh
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Patent number: 10910225Abstract: There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.Type: GrantFiled: November 27, 2018Date of Patent: February 2, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Kensaku Narushima, Atsushi Matsumoto, Nagayasu Hiramatsu, Takanobu Hotta
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Publication number: 20200258747Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.Type: ApplicationFiled: February 6, 2020Publication date: August 13, 2020Inventors: Kensaku NARUSHIMA, Nagayasu HIRAMATSU, Takanobu HOTTA, Atsushi MATSUMOTO, Masato ARAKI, Hideaki YAMASAKI
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Publication number: 20190292656Abstract: A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.Type: ApplicationFiled: March 14, 2019Publication date: September 26, 2019Inventors: Kensaku NARUSHIMA, Nagayasu HIRAMATSU, Atsushi MATSUMOTO, Takanobu HOTTA
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Publication number: 20190284698Abstract: A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.Type: ApplicationFiled: March 13, 2019Publication date: September 19, 2019Inventors: Kennan MO, Kouichi SEKIDO, Takanobu HOTTA, Nagayasu HIRAMATSU, Atsushi MATSUMOTO, Kensaku NARUSHIMA
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Patent number: 10319585Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.Type: GrantFiled: October 2, 2017Date of Patent: June 11, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Kohichi Satoh, Shinya Okabe, Nagayasu Hiramatsu, Motoko Nakagomi, Yuji Kobayashi
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Publication number: 20190164768Abstract: There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.Type: ApplicationFiled: November 27, 2018Publication date: May 30, 2019Inventors: Kensaku NARUSHIMA, Atsushi MATSUMOTO, Nagayasu HIRAMATSU, Takanobu HOTTA
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Publication number: 20180102244Abstract: A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma CVD process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ALD process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.Type: ApplicationFiled: October 2, 2017Publication date: April 12, 2018Inventors: Kohichi SATOH, Shinya OKABE, Nagayasu HIRAMATSU, Motoko NAKAGOMI, Yuji KOBAYASHI
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Publication number: 20180047541Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.Type: ApplicationFiled: August 8, 2017Publication date: February 15, 2018Inventors: Shinya OKABE, Takashi MOCHIZUKI, Hideaki YAMASAKI, Nagayasu HIRAMATSU, Kazuki DEMPOH