Abstract: A memory control circuit stores codewords in a memory module configured to limit errors to one wire of a memory interface. A codeword includes a first block with a first data portion and a second block with a second data portion. An error correction code symbol in the second block is used to locate and correct errors in the second block. Some bits of the first block are repurposed as metadata. The remaining bits are used as parity bits for detecting errors in the first block. The second block is merged with the first block before being stored to memory and demerged from the first block in a memory read operation. Demerging causes errors in the first block to create errors in a corresponding location in the second block. The location of errors found in the second block is used to locate and correct parity errors in the first block.

Abstract: A component die validation built-in self-test (VBIST) engine is presented. In an aspect, a component die includes component circuitry for performing a component function, interface circuitry for communicating with another die, and a VBIST circuit. The VBIST circuit includes a traffic generator that generates test data streams, a tracker that receives and validates test data streams, and a configurable switching matrix for coupling the traffic generator to at least one of the component circuitry, the interface circuitry, or the tracker, and for coupling at least one of the component circuitry, the interface circuitry, or the traffic generator to the tracker. The VBIST circuit can send traffic to and from the component circuitry directly, or indirectly via the interface circuitry in loopback mode, and can be used for memory initialization and test.

Abstract: Apparatus and methods for extending functionality of memory controllers in a processor-based device are disclosed herein. In one aspect, a processor-based device provides a memory access intercept circuit that is communicatively coupled to a memory controller and a memory device. The memory access intercept circuit is configured to receive a memory write request that is directed to and received by the memory controller, and generates a write transaction identifier (ID) for the memory write request. The memory access intercept circuit then generates proxy write data containing the write transaction ID, and sends the proxy write data to the memory controller. The memory access intercept circuit subsequently intercepts the actual write data directed to the memory controller, and stores the write data in a write data buffer in association with the write transaction ID.

Abstract: A codeword read from memory includes data blocks including data and supplemental blocks including error correction code (ECC) symbols for detecting and correcting data errors. Metadata can be stored in the supplemental blocks to increase memory utilization but using bits of the supplemental blocks for metadata leaves too few bits remaining for the ECC symbols. To maintain error protection, the supplemental blocks include ECC symbols to protect a first data portion of the codeword and parity bits configured to protect a second data portion of the codeword. Errors in the first data portion can be located and corrected using the ECC symbols. Errors in the second data portion can be detected by the parity. For example, the first data portion is encoded based on the second data portion, so locations of parity errors correspond to locations of symbol errors, and parity errors can be corrected.

Abstract: A memory control circuit stores codewords in a memory module configured to limit errors to one wire of a memory interface. A codeword includes a first block with a first data portion and a second block with a second data portion. An error correction code symbol in the second block is used to locate and correct errors in the second block. Some bits of the first block are repurposed as metadata. The remaining bits are used as parity bits for detecting errors in the first block. The second block is merged with the first block before being stored to memory and demerged from the first block in a memory read operation. Demerging causes errors in the first block to create errors in a corresponding location in the second block. The location of errors found in the second block is used to locate and correct parity errors in the first block.

Abstract: Address range memory mirroring in a computer system, and related methods and computer-readable media. The computer system includes one or more memory mirror agents that are each configured to be programmed to mirror write data of a write request to a memory address mapped to the memory mirror agent. The memory mirror agent is configured to mirror write data to a redundant memory space in memory if the write memory address is within a programmed memory space to be mirrored by the memory mirror agent. The memory mirror agent can be programmed to perform memory mirroring based on specific address ranges to provide flexibility in controlling and changing the exact memory space of the memory system to be mirrored. If an error is detected in read data in response to a memory read request, the memory mirror agent can retrieve the stored redundant data to maintain data integrity.

Abstract: A data processing system includes a store datapath configured to perform tag checking in a store operation to a store address associated with a cache line in a memory. The store datapath includes a cache lookup circuit configured to pre-load a store cache line that is to be updated in the store operation, wherein the store cache line comprises the cache line in the memory to be updated in the store operation. The store datapath also includes a tag check circuit configured to compare a store address tag associated with the store address to a store operation tag associated with the store operation. The data processing system may include a load datapath configured to perform tag checking in a load operation from a load cache line in the memory by comparing a load address tag associated with the load address to a load operation tag associated with the load operation.

Abstract: A data processing system includes a store datapath configured to perform tag checking in a store operation to a store address associated with a cache line in a memory. The store datapath includes a cache lookup circuit configured to pre-load a store cache line that is to be updated in the store operation, wherein the store cache line comprises the cache line in the memory to be updated in the store operation. The store datapath also includes a tag check circuit configured to compare a store address tag associated with the store address to a store operation tag associated with the store operation. The data processing system may include a load datapath configured to perform tag checking in a load operation from a load cache line in the memory by comparing a load address tag associated with the load address to a load operation tag associated with the load operation.

Abstract: An embodiment of a memory apparatus may include a tag cache to cache tag information, and a memory controller communicatively coupled to the tag cache to determine if a request for a memory line results in a tag cache miss, bring tag information for the missed memory line into the tag cache if the request results in a cache miss, and bring tag information for at least one additional memory line adjacent to the missed memory line into the tag cache if the request results in a cache miss. Additional embodiments are disclosed and claimed.

Abstract: In one example a controller comprises logic, at least partially including hardware logic, configured to implement a first iteration of an interference test on a communication interconnect comprising a victim lane and a first aggressor lane by generating a first set of pseudo-random patterns on the victim lane and the aggressor lane using a first seed and implement a second iteration of an interference test by advancing the seed on the first aggressor lane. Other examples may be described.

Abstract: A multi-die memory device having fixed bandwidth interfaces can selectively connect portions of the interfaces of the multiple memory dies as a memory channel for the multi-die device. The selective application of the interface bits of the memory dies enables the application of ECC (error checking and correction) in memory devices that otherwise have insufficient connectors to exchange ECC information. The device includes circuitry to selectively apply CAS (column address select) signals to the memory dies to selectively connect the connectors of the memory dies. CAS selection can provide various configurations in which selected bits of a first memory die interface are combined with selected bit or bits of a second memory die interface to provide the device interface. The memory dies can operate in byte mode to apply only half of their data I/O (input/output) interface, with CAS doubled up to provide access to the memory arrays.

Abstract: An in-band error correcting code (ECC) module intercepts input/output (I/O) operations directed to a memory. The in-band ECC module determines whether the I/O is directed to data that needs to be protected against error. In response to determining that the I/O is directed to data that needs to be protected against error, the in-band ECC module directs a memory controller to store or access ECC data corresponding to the data in a first preassigned area of the memory, and to store or access the data in a second preassigned area of the memory.

Abstract: An embodiment of a semiconductor package apparatus may include technology to determine a workload characteristic for a tag cache, and adjust a power parameter for the tag cache based on the workload characteristic. Other embodiments are disclosed and claimed.

Abstract: An embodiment of a memory apparatus may include a tag cache to cache tag information, and a memory controller communicatively coupled to the tag cache to determine if a request for a memory line results in a tag cache miss, bring tag information for the missed memory line into the tag cache if the request results in a cache miss, and bring tag information for at least one additional memory line adjacent to the missed memory line into the tag cache if the request results in a cache miss. Additional embodiments are disclosed and claimed.

Abstract: A multi-die memory device having fixed bandwidth interfaces can selectively connect portions of the interfaces of the multiple memory dies as a memory channel for the multi-die device. The selective application of the interface bits of the memory dies enables the application of ECC (error checking and correction) in memory devices that otherwise have insufficient connectors to exchange ECC information. The device includes circuitry to selectively apply CAS (column address select) signals to the memory dies to selectively connect the connectors of the memory dies. CAS selection can provide various configurations in which selected bits of a first memory die interface are combined with selected bit or bits of a second memory die interface to provide the device interface. The memory dies can operate in byte mode to apply only half of their data I/O (input/output) interface, with CAS doubled up to provide access to the memory arrays.

Abstract: A shared command/address (C/A) bus for memory devices in a multi-channel configuration can enable reducing the number of pins and signal lines in a memory subsystem. In one embodiment, a memory controller includes hardware logic to generate commands to access a plurality of memory devices via a plurality of channels and input/output (I/O) circuitry to transmit command/address (C/A) information for the commands to the plurality of memory devices over a single C/A bus for the plurality of channels. In one embodiment, double-speed strobe signal lines can also enable reducing the number of pins and signal lines in a memory subsystem.

Abstract: A shared command/address (C/A) bus for memory devices in a multi-channel configuration can enable reducing the number of pins and signal lines in a memory subsystem. In one embodiment, a memory controller includes hardware logic to generate commands to access a plurality of memory devices via a plurality of channels and input/output (I/O) circuitry to transmit command/address (C/A) information for the commands to the plurality of memory devices over a single C/A bus for the plurality of channels. In one embodiment, double-speed strobe signal lines can also enable reducing the number of pins and signal lines in a memory subsystem.

Abstract: Dynamic monitoring of current draw by a memory device or memory subsystem can enable a power management system to adjust a memory access performance parameter based on monitored power usage. The system can generate a power usage characterization for the memory device and/or memory subsystem based on monitoring current draw for a known pattern, and then subsequently use the power usage characterization to determine how to adjust the memory access performance parameter.

Abstract: In one example a controller comprises logic, at least partially including hardware logic, configured to implement a first iteration of an interference test on a communication interconnect comprising a victim lane and a first aggressor lane by generating a first set of pseudo-random patterns on the victim lane and the aggressor lane using a first seed and implement a second iteration of an interference test by advancing the seed on the first aggressor lane. Other examples may be described.

Abstract: In one example a controller comprises logic, at least partially including hardware logic, configured to implement a first iteration of an interference test on a communication interconnect comprising a victim lane and a first aggressor lane by generating a first set of pseudo-random patterns on the victim lane and the aggressor lane using a first seed and implement a second iteration of an interference test by advancing the seed on the first aggressor lane. Other examples may be described.