Abstract: This flat conductive plate provided with an insulating film includes a flat conductive plate which is a punched product, and an insulating film which coats at least a part of the flat conductive plate, the insulating film is an electrodeposited film, the insulating film includes a polyamide-imide resin and a fluorine-based resin, an amount of the fluorine-based resin with respect to a total amount of the polyamide-imide resin and the fluorine-based resin is in a range of 72% by mass or more and 95% by mass or less, a relative permittivity at 25° C. is in a range of 2.2 or more and 2.8 or less, and an average film thickness is in a range of 5 ?m or more and 100 ?m or less.

Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.