Patents by Inventor Nagisa SATO
Nagisa SATO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11342223Abstract: A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.Type: GrantFiled: May 22, 2019Date of Patent: May 24, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Tatsuya Yamaguchi, Syuji Nozawa, Nagisa Sato
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Patent number: 11313836Abstract: A collimated beam (23) of a surface acoustic wave propagates on a piezoelectric substrate (22) while passing through sensitive film (25) to adsorb a sensing gas. Signal processing unit (40) transmits an exciting burst signal to sensor electrode (24) to excite the collimated beam (23), receives first and second returned burst signals after the collimated beam (23) has propagated, and calculates a target gas parameter by a target leakage factor of the background gas and a relation between reference gas parameters and reference leakage factors of reference gases, the leakage factor is provided by first and second attenuations of the first and second returned burst signals, respectively, using waveform data of the first and second returned burst signals.Type: GrantFiled: January 30, 2019Date of Patent: April 26, 2022Assignee: BALL WAVE INCInventors: Kazushi Yamanaka, Nobuo Takeda, Shingo Akao, Toshihiro Tsuji, Toru Oizumi, Hideyuki Fukushi, Tatsuhiro Okano, Nagisa Sato, Yusuke Tsukahara
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Patent number: 11307176Abstract: A standard-moisture generator includes a flow controller configured to control a flow of a gas, a dryer connected to the flow controller, configured to absorb water molecules in the gas and to generate a dry gas having a background moisture, a moisture cell connected to the dryer, configured to add an object moisture to the dry gas, and a delay member connected to the moisture cell, configured to pass the dry gas with a delay time depending on a concentration of the background moisture in the dry gas.Type: GrantFiled: February 12, 2019Date of Patent: April 19, 2022Assignee: Ball Wave Inc.Inventors: Yusuke Tsukahara, Osamu Hirayama, Nobuo Takeda, Toshihiro Tsuji, Kazushi Yamanaka, Toru Oizumi, Hideyuki Fukushi, Nagisa Sato, Shingo Akao, Tatsuhiro Okano
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Publication number: 20220102160Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.Type: ApplicationFiled: December 10, 2021Publication date: March 31, 2022Applicants: Tokyo Electron Limited, UNIVERSITE D'ORLEANSInventors: Shigeru TAHARA, Jacques FAGUET, Kaoru MAEKAWA, Kumiko ONO, Nagisa SATO, Remi DUSSART, Thomas TILLOCHER, Philippe LEFAUCHEUX, Gaëlle ANTOUN
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Patent number: 11258023Abstract: A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.Type: GrantFiled: August 5, 2020Date of Patent: February 22, 2022Assignee: Nantero, Inc.Inventors: Mark Ramsbey, Thomas Rueckes, Tatsuya Yamaguchi, Syuji Nozawa, Nagisa Sato
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Publication number: 20220045290Abstract: A method to fabricate a resistive change element. The method may include forming a stack over a substrate. The stack may include a conductive material, a resistive change material, a first surface, and a second surfaces opposite the first surface. The method may further include depositing a first material over the stack such that the first material directly contacts at least one of the first surface and the second surface of the stack. The method may also include after depositing the first material, forming a second material over the first material and evaporating a portion of the first material through the second material to create a gap between the second material and the at least one of the first surface and the second surface of the stack.Type: ApplicationFiled: August 5, 2020Publication date: February 10, 2022Inventors: Mark RAMSBEY, Thomas RUECKES, Tatsuya YAMAGUCHI, Syuji NOZAWA, Nagisa SATO
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Patent number: 11139313Abstract: A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.Type: GrantFiled: November 7, 2019Date of Patent: October 5, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Sunghil Lee, Tatsuya Yamaguchi, Syuji Nozawa, Nagisa Sato
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Patent number: 11120999Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.Type: GrantFiled: December 11, 2018Date of Patent: September 14, 2021Assignees: TOKYO ELECTRON LIMITED, UNIVERSITE D'ORLEANSInventors: Koichi Yatsuda, Kaoru Maekawa, Nagisa Sato, Kumiko Ono, Shigeru Tahara, Jacques Faguet, Remi Dussart, Thomas Tillocher, Philippe Lefaucheux, Gaëlle Antoun
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Patent number: 11069536Abstract: There is provided a method of manufacturing a device, which comprises: a preparation step of preparing a workpiece having a recess formed therein; a burying step of burying a sacrificial material composed of a thermally decomposable organic material in the recess; a lamination step of laminating a preliminary sealing film on the sacrificial material buried in the recess; a first removal step of removing the sacrificial material in the recess through the preliminary sealing film, by annealing the workpiece at a first temperature and thermally decomposing the sacrificial material; a processing step of performing a predetermined process on a portion other than the recess in the workpiece, in a state in which the recess is covered with the preliminary sealing film; and a second removal step of removing the preliminary sealing film.Type: GrantFiled: November 11, 2019Date of Patent: July 20, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Sunghil Lee, Tatsuya Yamaguchi, Nagisa Sato, Syuji Nozawa
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Patent number: 10957531Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a polymer film, which is a film of a polymer having a urea bond generated by polymerization of plural types of monomers, around a plurality of structures provided on a substrate and including a first material; adjusting a shape of the polymer film; forming a temporary sealing film on the polymer film to cover the polymer film; and heating the polymer film to depolymerize the polymer into the plural types of monomers and desorb the plural types of depolymerized monomers through the temporary sealing film.Type: GrantFiled: September 20, 2019Date of Patent: March 23, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Syuji Nozawa, Tatsuya Yamaguchi, Nagisa Sato
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Publication number: 20200400619Abstract: A standard-moisture generator includes a flow controller configured to control a flow of a gas, a dryer connected to the flow controller, configured to absorb water molecules in the gas and to generate a dry gas having a background moisture, a moisture cell connected to the dryer, configured to add an object moisture to the dry gas, and a delay member connected to the moisture cell, configured to pass the dry gas with a delay time depending on a concentration of the background moisture in the dry gas.Type: ApplicationFiled: February 12, 2019Publication date: December 24, 2020Applicant: Ball Wave Inc.Inventors: Yusuke TSUKAHARA, Osamu HIRAYAMA, Nobuo TAKEDA, Toshihiro TSUJI, Kazushi YAMANAKA, Toru OIZUMI, Hideyuki FUKUSHI, Nagisa SATO, Shingo AKAO, Tatsuhiro OKANO
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Publication number: 20200381264Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.Type: ApplicationFiled: December 11, 2018Publication date: December 3, 2020Applicants: TOKYO ELECTRON LIMITED, UNIVERSITE D'ORLEANSInventors: Koichi YATSUDA, Kaoru MAEKAWA, Nagisa SATO, Kumiko ONO, Shigeru TAHARA, Jacques FAGUET, Remi DUSSART, Thomas TILLOCHER, Philippe LEFAUCHEUX, Gaëlle ANTOUN
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Publication number: 20200225190Abstract: A collimated beam (23) of a surface acoustic wave propagates on a piezoelectric substrate (22) while passing through sensitive film (25) to adsorb a sensing gas. Signal processing unit (40) transmits an exciting burst signal to sensor electrode (24) to excite the collimated beam (23), receives first and second returned burst signals after the collimated beam (23) has propagated, and calculates a target gas parameter by a target leakage factor of the background gas and a relation between reference gas parameters and reference leakage factors of reference gases, the leakage factor is provided by first and second attenuations of the first and second returned burst signals, respectively, using waveform data of the first and second returned burst signals.Type: ApplicationFiled: January 30, 2019Publication date: July 16, 2020Applicant: Ball Wave Inc.Inventors: Kazushi YAMANAKA, Nobuo TAKEDA, Shingo AKAO, Toshihiro TSUJI, Toru OIZUMI, Hideyuki FUKUSHI, Tatsuhiro OKANO, Nagisa SATO, Yusuke TSUKAHARA
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Publication number: 20200152478Abstract: There is provided a method of manufacturing a device, which comprises: a preparation step of preparing a workpiece having a recess formed therein; a burying step of burying a sacrificial material composed of a thermally decomposable organic material in the recess; a lamination step of laminating a preliminary sealing film on the sacrificial material buried in the recess; a first removal step of removing the sacrificial material in the recess through the preliminary sealing film, by annealing the workpiece at a first temperature and thermally decomposing the sacrificial material; a processing step of performing a predetermined process on a portion other than the recess in the workpiece, in a state in which the recess is covered with the preliminary sealing film; and a second removal step of removing the preliminary sealing film.Type: ApplicationFiled: November 11, 2019Publication date: May 14, 2020Inventors: Sunghil LEE, Tatsuya YAMAGUCHI, Nagisa SATO, Syuji NOZAWA
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Publication number: 20200152656Abstract: A method of manufacturing a semiconductor memory includes: forming a first lamination on a substrate; forming a first hole through the first lamination; embedding a first sacrificial material including a thermally decomposable organic material in the first hole; forming a recess at an upper portion of the first hole; forming an oxide film in the recess; removing the first sacrificial material under the oxide film; embedding a second sacrificial material on the oxide film in the recess; forming a second lamination on the first lamination and the second sacrificial material; forming a second hole through the second lamination at a position corresponding to the first hole by etching the second lamination in an extension direction of the first hole; and removing the oxide film and the second sacrificial material.Type: ApplicationFiled: November 7, 2019Publication date: May 14, 2020Inventors: Sunghil LEE, Tatsuya YAMAGUCHI, Syuji NOZAWA, Nagisa SATO
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Publication number: 20200098561Abstract: There is provided a method of manufacturing a semiconductor device, including: forming a polymer film, which is a film of a polymer having a urea bond generated by polymerization of plural types of monomers, around a plurality of structures provided on a substrate and including a first material; adjusting a shape of the polymer film; forming a temporary sealing film on the polymer film to cover the polymer film; and heating the polymer film to depolymerize the polymer into the plural types of monomers and desorb the plural types of depolymerized monomers through the temporary sealing film.Type: ApplicationFiled: September 20, 2019Publication date: March 26, 2020Inventors: Syuji NOZAWA, Tatsuya YAMAGUCHI, Nagisa SATO
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Publication number: 20190363011Abstract: A semiconductor device manufacturing method includes burying a void formed in a substrate with a polymer having a urea bond; forming an oxide film on the substrate; and desorbing a depolymerized polymer obtained by depolymerizing the polymer from the void through the oxide film.Type: ApplicationFiled: May 22, 2019Publication date: November 28, 2019Inventors: Tatsuya YAMAGUCHI, Syuji NOZAWA, Nagisa SATO