Patents by Inventor Nagisa SUYAMA

Nagisa SUYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
    Publication number: 20250232975
    Abstract: A film is formed on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer by supplying a first precursor and an addition agent to the substrate, producing a second precursor that is chemically more stable than the first precursor, and exposing and adsorbing the first precursor and the second precursor to a surface of the substrate; and (b) modifying the first layer into a second layer by supplying a reactant to the substrate.
    Type: Application
    Filed: February 20, 2025
    Publication date: July 17, 2025
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko NAKATANI, Nagisa SUYAMA, Tomoya NAGAHASHI
  • METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20250014891
    Abstract: There is provided a technique that includes: (a) supplying a decomposable process gas containing silicon to the substrate to form a layer containing a Si—Si—Si bond on the substrate; and (b) supplying a reaction gas to the substrate to dissociate the Si—Si—Si bond.
    Type: Application
    Filed: July 3, 2024
    Publication date: January 9, 2025
    Applicant: Kokusai Electric Corporation
    Inventors: Hiroyuki KOIDE, Nagisa SUYAMA, Tomoya NAGAHASHI
  • METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20240425972
    Abstract: There is provided a technique that includes: a) supplying an adsorption inhibition gas to a substrate; b) supplying a precursor gas to the substrate; c) supplying a reaction gas to the substrate; and d) forming a film containing an element contained in the precursor gas on the substrate by performing a), b), and c) a predetermined number of times in a state where an amount of exposure of the precursor gas supplied in b) to the substrate is larger than an amount of exposure of the adsorption inhibition gas supplied in a) to the substrate.
    Type: Application
    Filed: September 3, 2024
    Publication date: December 26, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Tomoya NAGAHASHI, Nagisa SUYAMA, Shinya EBATA, Shingo NOHARA
  • METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20240266164
    Abstract: There is provided a technique that includes: (a) supplying a first process gas to the substrate; and (b) supplying a second process gas from a second reservoir to the substrate, wherein (b) is performed in a manner so as to shorten a time until a successive reaction of the second process gas on the substrate converges.
    Type: Application
    Filed: February 2, 2024
    Publication date: August 8, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Nagisa SUYAMA, Hiroyuki KOIDE, Tomoya NAGAHASHI