Patents by Inventor Nai-Chung FU
Nai-Chung FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11815571Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.Type: GrantFiled: May 3, 2022Date of Patent: November 14, 2023Assignee: VOLTAFIELD TECHNOLOGY CORPORATIONInventors: Nai-Chung Fu, Chien-He Hou, Chih-Chao Shih, Fu-Tai Liou
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Publication number: 20220373619Abstract: The present invention provides an electric current sensor comprising a substrate and MR sensing circuit. The substrate has a first surface along a first axis and a second axis. The MR sensing circuit is utilized to detect a magnetic filed about a third axis. The MR sensing circuit is formed onto the first surface and has a plurality of MR sensor pairs. Each MR sensor in each MR sensor pair has a plurality of conductive structures, wherein the conductive structures of one MR sensor are symmetrically arranged. Alternatively, the present invention provides an electric current sensing device using a pair of electric sensors symmetrically arranged at two lateral sides of a conductive wire having an electric current flowing therethrough for eliminating the magnetic field along Z axis generated by external environment.Type: ApplicationFiled: May 3, 2022Publication date: November 24, 2022Inventors: Nai-Chung Fu, Chien-He Hou, Chih-Chao Shih, Fu-Tai Liou
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Patent number: 11067642Abstract: The present invention provides device for generating magnetic field of calibration and built-in self-calibration (BISC) magnetic sensor and calibration method, in which a novelty structure utilized for generating a uniform, predetermined magnitude, and three-dimensional orthogonal or approximately orthogonal magnetic field of calibration is arranged in the magnetic sensor such that the magnetic sensor can perform BISC function for obtaining a calibrating information with respect to the magnetic field of calibration anytime and anywhere. The magnetic sensor can be arranged in the application device for measuring magnetic field under the real environment where the magnetic sensor is located and the calibrating information are utilized for calibrating the measuring result thereby improving and advancing the accuracy of measuring three-dimensional magnetic field.Type: GrantFiled: March 3, 2020Date of Patent: July 20, 2021Assignee: VOLTAFIELD TECHNOLOGY CORPORATIONInventors: Nai-Chung Fu, Ming-Yu Kuo, Ta-Yung Wong
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Publication number: 20200300928Abstract: The present invention provides device for generating magnetic field of calibration and built-in self-calibration (BISC) magnetic sensor and calibration method, in which a novelty structure utilized for generating a uniform, predetermined magnitude, and three-dimensional orthogonal or approximately orthogonal magnetic field of calibration is arranged in the magnetic sensor such that the magnetic sensor can perform BISC function for obtaining a calibrating information with respect to the magnetic field of calibration anytime and anywhere. The magnetic sensor can be arranged in the application device for measuring magnetic field under the real environment where the magnetic sensor is located and the calibrating information are utilized for calibrating the measuring result thereby improving and advancing the accuracy of measuring three-dimensional magnetic field.Type: ApplicationFiled: March 3, 2020Publication date: September 24, 2020Inventors: Nai-Chung Fu, Ming-Yu Kuo, Ta-Yung Wong
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Patent number: 9651636Abstract: A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil.Type: GrantFiled: August 29, 2013Date of Patent: May 16, 2017Assignee: Voltafield Technology Corp.Inventors: Nai-Chung Fu, Fu-Tai Liou, Jia-Mou Lee
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Patent number: 9543509Abstract: A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.Type: GrantFiled: October 22, 2013Date of Patent: January 10, 2017Assignee: Voltafield Technology Corp.Inventors: Fu-Tai Liou, Chien-Min Lee, Nai-Chung Fu
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Patent number: 9488701Abstract: An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.Type: GrantFiled: February 21, 2013Date of Patent: November 8, 2016Assignee: Voltafield Technology Corp.Inventors: Chien-Min Lee, Nai-Chung Fu, Kuang-Ching Chen
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Patent number: 9335386Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.Type: GrantFiled: April 28, 2014Date of Patent: May 10, 2016Assignee: Voltafield Technology Corp.Inventors: Nai-Chung Fu, Kuang-Ching Chen, Fu-Tai Liou
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Publication number: 20160109532Abstract: A set/reset circuit used with a magnetoresistive sensor includes a coil, four switch units, a capacitor and a control unit. The four switch units are electrically coupled between a power supply voltage (or a reference voltage) and the coil and have variable resistances. The first end of the capacitor is electrically coupled to the power supply voltage and some of the switch units, and the second end of the capacitor is electrically coupled to the reference voltage. The control unit is electrically coupled to the four switch units and configured to receive a first pulse width modulation signal and a second pulse width modulation signal. A magnetic sensing device utilizing the abovementioned set/reset circuit is also provided.Type: ApplicationFiled: March 26, 2015Publication date: April 21, 2016Inventor: Nai-Chung FU
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Patent number: 9128141Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.Type: GrantFiled: December 14, 2012Date of Patent: September 8, 2015Assignee: Voltafield Technology Corp.Inventors: Fu-Tai Liou, Nai-Chung Fu
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Patent number: 8988073Abstract: A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle.Type: GrantFiled: April 19, 2011Date of Patent: March 24, 2015Assignee: Voltafield Technology CorporationInventors: Nai-Chung Fu, Fu-Tai Liou
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Publication number: 20150008913Abstract: A single-chip three-axis magnetic field sensing device is provided. This single-chip three-axis magnetic field sensing device comprises a substrate, a first sensing module, a second sensing module, a third sensing module and at least one coil. The substrate includes a surface. The first sensing module comprises at least one first magnetoresistive element and is configured to sense a first magnetic field component substantially parallel to the surface. The second sensing module comprises at least one second magnetoresistive element and is configured to sense a second magnetic field component substantially parallel to the surface. The third sensing module comprises at least one third magnetoresistive element and is configured to sense a third magnetic field component substantially perpendicular to the surface. Wherein one of the first magnetoresistive element and the second magnetoresistive element and the third magnetoresistive element is disposed right above or right below the at least one coil.Type: ApplicationFiled: August 29, 2013Publication date: January 8, 2015Applicant: Voltafield Technology Corp.Inventors: Nai-Chung Fu, Fu-Tai Liou, Jia-Mou Lee
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Publication number: 20140347047Abstract: A magnetoresistive sensor is provided. Specifically, multiple layers of or single layer of conductor line are formed at the same level as an insulating layer on a substrate as a bottom conductive layer. A magnetoresistive structure is formed on the bottom conductive layer and has opposite first surface and second surface. The second surface faces toward the substrate and is contacted with the bottom conductive layer. Afterward, another insulating layer is formed on the first surface, a slot is formed at the same level as the another insulating layer and a conductor line is formed in the slot and contacted with the first surface, so that one layer or multiple layers of conductor line can be formed as a top conductive layer. A lengthwise extending direction of each of the bottom and top conductor layers is intersected a lengthwise extending direction of the magnetoresistive structure with an angle.Type: ApplicationFiled: August 12, 2014Publication date: November 27, 2014Applicant: Voltafield Technology CorporationInventors: Nai-Chung Fu, Fu-Tai Liou
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Publication number: 20140332914Abstract: A magnetoresistive structure includes a substrate and a patterned stack structure. The substrate has a back surface and a front surface having a step portion. The patterned stack structure is on the step portion of the front surface and comprises a magnetoresistive layer, a conductive cap layer and a dielectric hard mask layer. The step portion has a top surface parallel to the back surface, a bottom surface parallel to the back surface and a step height joining the top surface and bottom surface and being not parallel to the back surface.Type: ApplicationFiled: October 22, 2013Publication date: November 13, 2014Applicant: Voltafield Technology Corp.Inventors: Fu-Tai Liou, Chien-Min Lee, Nai-Chung Fu
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Publication number: 20140322828Abstract: A method for manufacturing a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including an interconnect structure is formed on the substrate, wherein the interconnect structure comprises a metal pad. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. A patterned magnetoresistance component is formed above the metal damascene structure to electrically connect to the metal damascene structure.Type: ApplicationFiled: July 7, 2014Publication date: October 30, 2014Inventors: Fu-Tai Liou, Chien-Min Lee, Chih-Chien Liang, Nai-Chung Fu
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Patent number: 8871529Abstract: A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening. A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.Type: GrantFiled: March 22, 2012Date of Patent: October 28, 2014Inventors: Fu-Tai Liou, Chien-Min Lee, Chih-Chien Liang, Nai-Chung Fu
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Publication number: 20140232390Abstract: A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.Type: ApplicationFiled: April 28, 2014Publication date: August 21, 2014Applicant: Voltafield Technology Corp.Inventors: Nai-Chung Fu, Kuang-Ching Chen, Fu-Tai Liou
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Patent number: 8749232Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.Type: GrantFiled: September 24, 2012Date of Patent: June 10, 2014Assignee: Voltafield Technology CorpInventors: Nai-Chung Fu, Kuang-Ching Chen, Fu-Tai Liou
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Publication number: 20140132250Abstract: An integrated magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element and a built-in self test (BIST) unit. The substrate comprises a first surface and a second surface opposite to the first surface. The magnetoresistive sensing element is disposed above the first surface and comprises at least a magnetoresistive layer not parallel to the first surface. The BIST unit is disposed above the first surface and comprises at least a conductive part corresponding to the magnetoresistive layer. The conductive part is configured to generate a magnetic field along a direction perpendicular to the first surface. A projection of the conductive part on the first surface does not overlap with a projection of the magnetoresistive layer on the first surface.Type: ApplicationFiled: February 21, 2013Publication date: May 15, 2014Applicant: Voltafield Technology Corp.Inventors: Chien-Min Lee, Nai-Chung Fu, Kuang-Ching Chen
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Publication number: 20140111194Abstract: A magnetoresistive sensing device includes a substrate, a magnetoresistive sensing element, a circuitry element and a shielding unit. The magnetoresistive sensing element, the circuitry element and the shielding unit are disposed at the same side of the substrate. The shielding unit is between the magnetoresistive sensing element and the circuitry element. The shielding unit comprises at least one magnetic material.Type: ApplicationFiled: December 14, 2012Publication date: April 24, 2014Applicant: Voltafield Technology Corp.Inventors: Fu-Tai Liou, Nai-Chung Fu