Abstract: Disclosed is a thermal conduction-electrical conduction isolated circuit board with a ceramic substrate and a power transistor embedded, mainly comprising: a dielectric material layer, a heat-dissipating ceramic block, a securing portion, a stepped metal electrode layer, a power transistor, and a dielectric material packaging, wherein a via hole is formed in the dielectric material layer, the heat-dissipating ceramic block is correspondingly embedded in the via hole, the heat-dissipating ceramic block has a thermal conductivity higher than that of the dielectric material layer and a thickness less than that of the dielectric material layer, the stepped metal electrode layer conducts electricity and heat for the power transistor, the dielectric material packaging is configured to partially expose the source connecting pin, drain connecting pin, and gate connecting pin of the encapsulated stepped metal electrode layer.

Abstract: A low parasitic inductance power module featuring staggered, interleaving conductive members, including: at least one base extending in a length direction, at least one input bus-bar and at least one output bus-bar being disposed on the base; a first unit including a first circuit base portion disposed on the base along the width direction, a plurality of first power devices being disposed on the first circuit base portion, each of the first power devices having paralleled first current input ends and paralleled first current output ends; the first current input ends or the current output ends being conductively connected to the first circuit base portion; and a second unit. The units are serially connected to the bus-bars via staggered, interleaving input conductive members and output conductive members whereby individual inductances generated are mutually counteracted, thus reducing the overall parasitic inductance.

Abstract: Disclosed is a flip-chip packaged power transistor module having a built-in gate driver, for outputting a high-power signal of at least tens of amperes, the module including at least one power transistor die which has an active side where at least one source pin, at least one drain pin and at least one gate pin are exposed; a ceramic substrate body which has a conducting junction side and a heat spreading side, a minimal spacing of the gate bonding pad from at least one of the source bonding pad or the drain bonding pad being less than 500 ?m, whereby parasitic inductance generated therebetween is reduced; at least one gate driver which has at least one gate pin configured to be soldered to the gate bonding pad, and at least one gate drive pin which corresponds to the gate pin and is configured to be soldered to the drive bonding pad.

Abstract: A low parasitic inductance power module featuring staggered interleaving conductive members, including: at least one base extending in a length direction; a substrate on which at least one input bus bar and at least one output bus bar are provided; a first unit including a first circuit base portion disposed on the base in a width direction, a plurality of first power devices being disposed on the first circuit base portion, each first power device having a first current input end and a first current output end which are parallel connected, the first current input end or the first current output end being conducted to the first circuit base portion; and a second unit. The units are serially-connected to the bus bars via input conductive members and output conductive members arrayed in a staggered interleaving mode, whereby to create individual inductances counteracting with each other, reducing overall parasitic inductance.