Abstract: An active golf instruction system comprises a first main unit and a second main unit. The first main unit further comprises three lifting mechanisms and three sliding mechanisms each connected to one lifting mechanism. A top shaft and several positioning shafts are installed in the sliding mechanisms. The second main unit further comprises a rotating wheel and a fastening unit. The first main unit and the second main unit are arranged oppositely. A student stands in between the first main unit and the second main unit. A computer control the top shaft and the positioning shafts to contact the head, shoulders, waist and knees of the student according to the height, weight, etc., of the student. A golf club is placed on the fastening unit of the second main unit. The sliding mechanisms and rotating wheel respectively rotate by appropriate degrees to provide a proper golf swing lesson.

Abstract: A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode formed over the substrate, and self-aligned source and drain regions implanted into the device with external electrodes connected thereto.

Abstract: Although the spacers are formed on the sidewalls of gate electrode and words lines via the same steps of deposition and etch-back processes, only the spacers disposed at the sidewalls of the gate electrode are practical for fabricating peripheral devices with LDD structure, and such fabrication is impractical in the memory cell region. On the contrary, the region beneath the spacers disposed at the sidewalls of word lines will become the path through which leakage current flows. The present invention makes use a shielding layer to cover the second active region as a masking, and then removes the spacers disposed at the sidewalls of word lines. Afterwards, isolating regions are formed through one implantation procedure to thereby decrease leakage current and simplify the process flow.

Abstract: A method of fabrication of an semiconductor device comprises applying an impurity of a predetermined polarity to a silicon substrate; forming a well by applying an impurity of an opposite polarity to a region in the silicon substrate; forming a first masking layer on the surface of the substrate; providing openings in the masking layer and implanting dopant ions of a first polarity into the surface of the substrate in a set of first regions selected in the substrate and the well forming a second masking layer on the surface of the substrate; implanting dopant ions of a second polarity through a second mask in other regions selected in the well and the substrate; removal of the second masking layer; formation of field oxide structures over the first and second regions; forming gate oxide layers above the exposed portions of the first and second central regions; and formation of conductive gate structures over the gate oxide layers.