Abstract: A semiconductor device includes a two-dimensional semiconductor layer formed by a two-dimensional semiconductor material having a first formation energy, a two-dimensional metal conductor layer formed by a two-dimensional metal material and covering a surface of the two-dimensional semiconductor layer, and a metal layer covering a surface of the two-dimensional metal conductor layer. The two-dimensional metal material has a second formation energy smaller than the first formation energy. The two-dimensional metal conductor layer is formed by bonding of cations from the metal layer and anions from the two-dimensional semiconductor layer. As such, the contact resistances between the two-dimensional materials and the metals can be effectively reduced, enabling the application of the two-dimensional materials in semiconductor devices such as field-effect transistors.

Abstract: The disclosure discloses a filtration material for desalination, including: a support layer; a nanofiber layer formed on the support layer; a hydrophobic layer formed on the nanofiber layer; and a hydrophilic layer formed on the hydrophobic layer. The nanofiber layer includes ionic polymer, polyvinyl alcohol (PVA), polyacrylonitrile, (PAN), polyethersulfone (PES) or polyvinglidene fluoride (PVDF). The hydrophobic layer includes polypropylene (PP), polyvinglidene fluoride (PVDF), poly-dimethylsiloxane (PDMS) or epoxy.