Abstract: The present invention relates to a negative-type photoresist composition for thick film, comprising: (A) 20 to 50 wt % of an alkali-soluble resin which is polymerized from a plurality of kinds of monomers, wherein the monomers includes compounds represented by formulas (1A) and (1B), and based on the weight ratio of the monomers to the alkali-soluble resin, the sum of the formula (1A) compound and the formula (1B) compound are 20 to 60%, and X of the formula (1A) and (1B) may be independently H, methyl or ethyl. (B) 10 to 30 wt % of crosslinker which can be a bisphenol fluorene derivative monomer having at least one ethylenically unsaturated double bond; (C) 5 to 15 wt % of photo initiator; and (D) residual solvent. The present invention also relates to use of the above-mentioned negative-type photoresist compound for thick film.

Abstract: The present invention relates to a negative-type photoresist composition for thick film, comprising: (A) 20 to 50 wt % of an alkali-soluble resin which is polymerized from a plurality of kinds of monomers, wherein the monomers includes compounds represented by formulas (1A) and (1B), and based on the weight ratio of the monomers to the alkali-soluble resin, the sum of the formula (1A) compound and the formula (1B) compound are 20 to 60%, and X of the formula (1A) and (1B) may be independently H, methyl or ethyl. (B) 10 to 30 wt % of crosslinker which can be a bisphenol fluorene derivative monomer having at least one ethylenically unsaturated double bond; (C) 5 to 15 wt % of photo initiator; and (D) residual solvent. The present invention also relates to use of the above-mentioned negative-type photoresist compound for thick film.

Abstract: The present invention provides a positive photosensitive resin composition, including an alkali soluble phenolic resin; an alkali soluble acrylic resin; and a photosensitive compound having quinone diazide. The positive photosensitive resin composition is applicable to a semi-additive process for forming tiny and fine wirings.

Abstract: A developer composition with low metal corrosiveness is provided. The developer composition includes 1 to 10 weight parts of tetraalkylammonium hydroxide; 0.01 to 3 weight parts of a metal corrosion inhibiting agent; 0.1 to 5 weight parts of a pH control agent; 0.1 to 5 weight parts of a surfactant; and water in balance. The developer composition of the present invention has a metal corrosion prevents corrosiveness to metals such as aluminum and copper during a resist development.