Patents by Inventor Nai-Wei Hsu
Nai-Wei Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923199Abstract: Aspects of the disclosure provide a method. The method includes forming a structure over a substrate, and forming a spacer layer on the structure, wherein the spacer layer has a recess. The method includes forming a mask layer over the spacer layer and in the recess, the mask layer including a first layer, a second layer and a third layer. The method includes patterning the third layer of the mask layer, and etching the first layer and the second layer of the mask layer to form an opening to expose the recess of the spacer layer, wherein the opening in the second layer has a first width; and. The method includes removing the second layer using a wet etchant, wherein the opening in the third layer has a second width, and the second with is greater than the first width.Type: GrantFiled: June 21, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Nai-Chia Chen, Wan Hsuan Hsu, Chia-Wei Wu, Neng-Jye Yang, Chun-Li Chou
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Patent number: 11594658Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second insulating portions covering first and second portions respectively, and a gap exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first insulating portion to contact the semiconductor structure. The second conductive portion is disposed on the second insulating portion to contact the third portion through the gap. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.Type: GrantFiled: September 26, 2020Date of Patent: February 28, 2023Assignee: Lextar Electronics CorporationInventors: Pei-Shiu Tsai, Yi-Ju Chen, Nai-Wei Hsu, Wei-Chang Yu
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Publication number: 20210280742Abstract: A light-emitting element is provided, including a semiconductor structure, a reflective structure, first and second insulating structures, a conductive structure, and first and second pads. The reflective structure is disposed on the semiconductor structure. The first insulating structure includes first and second protrusions covering first and second portions respectively, and a first recession exposes a third portion between the first and second portions. The conductive structure includes first and second conductive portion. The first conductive portion is disposed on the first protrusion to contact the semiconductor structure. The second conductive portion is disposed on the second protrusion to contact the third portion through the first recession. The first and second pads are respectively disposed on the first and second conductive portions. Each of the structures below the first and second pads are in flat-type bonding to enhance stress resistance.Type: ApplicationFiled: September 26, 2020Publication date: September 9, 2021Inventors: Pei-Shiu TSAI, Yi-Ju CHEN, Nai-Wei HSU, Wei-Chang YU
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Patent number: 9634194Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold, palladium or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.Type: GrantFiled: December 31, 2015Date of Patent: April 25, 2017Assignee: Lextar Electronics CorporationInventors: Nai-Wei Hsu, Te-Chung Wang
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Publication number: 20160149077Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.Type: ApplicationFiled: January 29, 2016Publication date: May 26, 2016Inventors: Chia-Lin HSIAO, Nai-Wei HSU, Te-Chung WANG, Tsung-Yu YANG
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Publication number: 20160111602Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold, palladium or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.Type: ApplicationFiled: December 31, 2015Publication date: April 21, 2016Inventors: Nai-Wei HSU, Te-Chung WANG
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Patent number: 9287461Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.Type: GrantFiled: October 15, 2013Date of Patent: March 15, 2016Assignee: LEXTAR ELECTRONICS CORPORATIONInventors: Chia-Lin Hsiao, Nai-Wei Hsu, Te-Chung Wang, Tsung-Yu Yang
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Patent number: 9257609Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.Type: GrantFiled: July 7, 2014Date of Patent: February 9, 2016Assignee: Lextar Electronics CorporationInventors: Nai-Wei Hsu, Te-Chung Wang
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Patent number: 9231165Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.Type: GrantFiled: May 5, 2014Date of Patent: January 5, 2016Assignee: Lextar Electronics CorporationInventors: Wen-Yuan Fan, Nai-Wei Hsu
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Publication number: 20150255681Abstract: A light-emitting diode (LED) chip is disclosed. The chip includes a light-emitting diode and an electrode layer on the light-emitting diode. The electrode layer includes a reflective metal layer. The reflective metal layer includes a first composition and a second composition. The first composition includes aluminum or silver, and the second composition includes copper, silicon, tin, platinum, gold or a combination thereof. The weight percentage of the second composition is greater than 0% and less than 20%.Type: ApplicationFiled: July 7, 2014Publication date: September 10, 2015Inventors: Nai-Wei HSU, Te-Chung WANG
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Publication number: 20150207030Abstract: A semiconductor light emitting structure comprising a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The patterned structure is formed on the first surface of the substrate. The patterned structure comprises a plurality of pyramid structures with different sizes. The first semiconductor layer is disposed on the first surface. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer.Type: ApplicationFiled: July 7, 2014Publication date: July 23, 2015Inventors: Ming-Chang Tang, Nai-Wei Hsu
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Publication number: 20150188009Abstract: The present disclosure provides a method of manufacturing a semiconductor device, including providing a semiconductor structure including a sequential stack of an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. A first metal layer and a second metal layer on the first metal layer are formed on the semiconductor structure. A heat treatment process is performed, such that the first metal layer is oxidized to form a first metal oxide layer and the second metal layer is reversed to form a second metallic compound layer between the first metal oxide layer and the p-type semiconductor layer. The first metal oxide layer and the second metallic compound layer are removed. A mesa etching process is performed after performing the heat treatment process, to form a mesa region exposing a part of the n-type semiconductor layer.Type: ApplicationFiled: June 13, 2014Publication date: July 2, 2015Inventors: Wen-Ying CHIH, Nai-Wei HSU, Te-Chung WANG
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Publication number: 20150187997Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.Type: ApplicationFiled: May 5, 2014Publication date: July 2, 2015Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Wen-Yuan Fan, Nai-Wei Hsu
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Publication number: 20150115309Abstract: A light emitting diode structure includes a substrate, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a composite conductive layer, a first electrode, and a second electrode. The N-type semiconductor layer is located on the substrate. The light emitting layer is located on a portion of the N-type semiconductor layer. The P-type semiconductor layer is located on the light emitting layer. The composite conductive layer sequentially has a first conductive layer, a second conductive layer, and a third conductive layer. The first conductive layer is attached to the P-type semiconductor layer, and the resistance of the first conductive layer is greater than the resistance of the third conductive layer. The first electrode is located on the third conductive layer. The second electrode is located on another portion of the N-type semiconductor layer that is not covered by the light emitting layer.Type: ApplicationFiled: September 23, 2014Publication date: April 30, 2015Inventors: Nai-Wei HSU, Te-Chung WANG, Tzong-Liang TSAI
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Publication number: 20150108519Abstract: A light-emitting structure is provided, including a substrate, an LED stacked structure formed on the substrate, and a plurality of cavities formed on the substrate surrounding the LED stacked structure. The LED stacked structure comprises an N-type epitaxial layer, an illumination layer, and a P-type epitaxial layer. A portion of the N-type epitaxial layer is exposed.Type: ApplicationFiled: May 8, 2014Publication date: April 23, 2015Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Ming-Chang TANG, Chia-Hsian CHOU, Nai-Wei HSU
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Publication number: 20140225150Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.Type: ApplicationFiled: October 15, 2013Publication date: August 14, 2014Applicant: Lextar Electronics CorporationInventors: Chia-Lin HSIAO, Nai-Wei Hsu, Te-Chung Wang, Tsung-Yu Yang