Abstract: A method and an apparatus for network address analysis are provided. In the method, unique identification information of a target client device located in a local area network is obtained. Packets transmitted in the local area network are listened, and a packet transmitted between the target client device and a dynamic host configuration protocol (DHCP) server is identified from the listened packets according to the unique identification information. Finally, the identified packet is analyzed to obtain a network address assigned to the target client device by the DHCP server.

Abstract: A method and an apparatus for network address analysis are provided. In the method, unique identification information of a target client device located in a local area network is obtained. Packets transmitted in the local area network are listened, and a packet transmitted between the target client device and a dynamic host configuration protocol (DHCP) server is identified from the listened packets according to the unique identification information. Finally, the identified packet is analyzed to obtain a network address assigned to the target client device by the DHCP server.

Abstract: Deflections from a desired trajectory of an ion beam outputted from an analyzer magnet are corrected with real-time monitoring of the ion beam deflection. Conductive structures are located close to the boundary of the beam exit, where each conductive structure is electrically insulated from other conductive structures and the analyzer magnet. Then, during implantation of ions into a wafer, continuous measuring of any current appearing on each conductive structure occurs, such that any collision between the conductive structure(s) and the ion beam is real-time monitored. By properly adjusting the shape/location/number of the conductive structure(s), and by properly adjusting the relative geometric relation among the conductive structure(s) and the desired trajectory, both the deflected angle and the deflected direction can be real-time monitored. Hence, the on-going implantation process and the implanter can be adjusted/maintained.

Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Abstract: An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

Abstract: A strength-enhanced quartz boat is provided to enhance the strength at connections between the quartz plates and quartz rods of the quartz boat. The strength-enhanced quartz boat includes a front quartz plate, a rear quartz plate, a first pair of quartz rods, a second pair of quartz rods and four reinforcement bars. The first pair of quartz rods are disposed longitudinally to connect the front quartz plate and rear quartz plate at an upper location respectively. The second pair of quartz rods are disposed longitudinally to connect, via first engagement connections, the front quartz plate and rear quartz plate at a lower location respectively. Each reinforcement bar is disposed longitudinally to connect, via a second engagement connection, to one corresponding front quartz plate or rear quartz plate at a location below one corresponding rod of the lower pair of quartz rods. A welding operation is performed on the first engagement connections and the second engagement connections respectively.