Patents by Inventor Naichuan Zhang

Naichuan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fully integrated avalanche photodiode receiver
    Patent number: 10473853
    Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 12, 2019
    Assignee: SiFotonics Technologies Co., Ltd.
    Inventors: Mengyuan Huang, Tzung-I Su, Su Li, Naichuan Zhang, Pengfei Cai, Wang Chen, Ching-yin Hong, Dong Pan
  • Fully Integrated Avalanche Photodiode Receiver
    Publication number: 20180180805
    Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.
    Type: Application
    Filed: December 21, 2017
    Publication date: June 28, 2018
    Inventors: Mengyuan Huang, Tzung-I Su, Su Li, Naichuan Zhang, Pengfei Cai, Wang Chen, Ching-yin Hong, Dong Pan