Patents by Inventor Naite Chen

Naite Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
    Patent number: 6730580
    Abstract: Within a Czochralski method for fabricating a silicon substrate wafer which employs pulling a silicon monocrystal ingot from a silicon melt and slicing therefrom the silicon substrate wafer, at least one of: (1) the silicon melt has introduced therein a halogen getter material from an extrinsic source; and (2) the silicon substrate wafer is further treated with a plasma. In accord with the method, the silicon substrate wafer is provided with attenuated defects.
    Type: Grant
    Filed: July 3, 2001
    Date of Patent: May 4, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung Chen, Shun-Long Chen, Hungtse Lin, Naite Chen
  • Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing
    Publication number: 20030008479
    Abstract: Within a Czochralski method for fabricating a silicon substrate wafer which employs pulling a silicon monocrystal ingot from a silicon melt and slicing therefrom the silicon substrate wafer, at least one of: (1) the silicon melt has introduced therein a halogen getter material from an extrinsic source; and (2) the silicon substrate wafer is further treated with a plasma. In accord with the method, the silicon substrate wafer is provided with attenuated defects.
    Type: Application
    Filed: July 3, 2001
    Publication date: January 9, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung Chen, Shun-Long Chen, Hungtse Lin, Naite Chen