Abstract: High speed address decoders may include a predecoder and a main decoder that are both responsive to a control signal. The predecoder switches from an active state to an inactive state in response to a transition of the control signal from a first logic state to a second logic state. Conversely, the main decoder commences switching from an inactive state to an active state simultaneously with the transition of the control signal from the first logic state to the second logic state. The predecoder may generate a predecoded address signal while the control signal is in the first logic state, which may then be decoded by the main decoder to activate a line enable signal when the control signal transitions to the second logic state. As a result, address decoding speed may be improved thereby facilitating higher speed operation of an integrated circuit memory device.

Abstract: A bias current for an integrated circuit is generated by generating a first bias current that increases with temperature, generating a second bias current that decreases with temperature, and summing the first bias current and the second bias current. Summing may take place by mirroring the first bias current, mirroring the second bias current and summing the mirrored first bias current and the mirrored second bias current. Pull-down circuits also are preferably provided for the circuits that generate the first and second bias currents. The pull-down circuits are responsive to a pulse signal. The pulse signal may be generated from a power-down signal or another signal. Accordingly, bias current generating circuits and methods can have reduced susceptibility to changes in temperature, changes in power supply voltage and/or process variations, and can rapidly produce the bias current.