Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.

Abstract: The dielectric-forming composition according to the invention is characterized by consisting of: composite particles for dielectrics in which part or all of the surfaces of inorganic particles with permittivity of 30 or greater are coated with a conductive metal or a compound thereof, or a conductive organic compound or a conductive inorganic material; and (B) a resin component constituted of at least one of a polymerizable compound and a polymer. In addition, another dielectric-forming composition according to the invention is characterized by containing: ultrafine particle-resin composite particles composed of (J) inorganic ultrafine particles with the average particle size of 0.

Abstract: Photocatalytic coating compositions contain a photocatalytic material such as obtained by doping nitrogen atoms to an interstitial site of metal oxide crystals, a titanium compound having a specific structure, an organosilane hydrolysate having a specific structure, and an organosiloxane oligomer having a specific structure. The photocatalytic coating compositions can give coating films that exhibit adequate photocatalytic action even in an environment with less spectral components having wavelengths of 400 nm or below and more visible light, for example in an indoor environment and in vehicle interiors having UV protection glass, and that have high transparency. Further, the photocatalytic coating compositions have good storage stability of dispersions.

Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Abstract: Coating compositions are silane-based coating compositions containing (a) fine metal particles and/or fine metal oxide particles, and (b) a titanium compound of specific structure and/or (d) an organosiloxane oligomer of specific structure, and (c) a silane compound of specific structure. The silane-based coating compositions can give coating films having good dispersibility of fine particles (a) and high transparency even at high concentrations.

Abstract: A polymer composition containing a specific silyl group-containing polymer, in which the maximum size of particles contained therein is 2 &mgr;m or less, and the number of particles having a size of 0.2 &mgr;m to 2 &mgr;m is 1,000 particles/ml or less. The composition may further contain a specific compound or at least one component selected from an organosilane represented by (R1)nSi(X)4-n, a hydrolyzate of the organosilane and a condensate of the organosilane. The composition is excellent in storage stability, high in hardness and excellent in mechanical strength such as wear resistance, so that a coating film having good taking-up properties even when no lubricant is contained, extremely smooth and having no difference in film thickness can be formed.

Abstract: The dielectric-forming composition according to the invention is characterized by consisting of:

Abstract: A polymer composition containing a specific silyl group-containing polymer, in which the maximum size of particles contained therein is 2 &mgr;m or less, and the number of particles having a size of 0.2 &mgr;m to 2 &mgr;m is 1,000 particles/ml or less. The composition may further contain a specific compound or at least one component selected from an organosilane represented by (R1)nSi(X)4-n, a hydrolyzate of the organosilane and a condensate of the organosilane. The composition is excellent in storage stability, high in hardness and excellent in mechanical strength such as wear resistance, so that a coating film having good taking-up properties even when no lubricant is contained, extremely smooth and having no difference in film thickness can be formed.