Patents by Inventor Nakahachiro Honma

Nakahachiro Honma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing high-purity metal targets for LSI electrodes
    Patent number: 4619695
    Abstract: A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
    Type: Grant
    Filed: July 26, 1984
    Date of Patent: October 28, 1986
    Assignees: Nihon Kogyo Kabushiki Kaisha, Nippon Telegraph & Telephone Public Corporation
    Inventors: Hideo Oikawa, Takao Amazawa, Nakahachiro Honma, Hideo Miyazaki, Iwao Kyono, Nobuyuki Mori, Yoshiharu Katoh, Masami Kuroki