Abstract: An exemplary yellow light emitting diode (LED) includes a substrate, a LED die, a phosphor layer and an encapsulant. The LED die is arranged on the substrate and comprises an indium gallium aluminum nitride represented by the formula InxGayAlzN, wherein x+y+z=1, 0?x?1, 0?y?1 and 0?z?1. The phosphor layer is a yttrium aluminum garnet phosphor layer configured on the light path of the LED die. The phosphor layer has a thickness of more than 250 micron. The encapsulant covers the LED die and the phosphor layer.

Abstract: An exemplary air cleaning device includes a roller, a photo-catalyst layer and a light source. The roller includes a base and a plurality of fins installed on the base. The roller is movable to cause an air to flow. The photo-catalyst layer is formed on the fins. The light source is disposed facing toward the roller for irradiating the photo-catalyst layer to cause a photocatalytic reaction thus cleaning the air flowing therethrough.

Abstract: A vapor deposition apparatus of the present invention has a substrate holder having a substrate holding surface for holding a substrate thereon, and a flow channel for supplying a source gas onto the substrate. The flow channel has an upper wall and a lower wall. An aperture portion is provided in the lower wall of the flow channel. The substrate holding surface of the substrate holder fits in the aperture portion while forming a space between the substrate holding surface and the aperture portion. A means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided. With this structure, since a means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided, the conductance with respect to outflow of gas increases, which in turn reduces variations in the amount of outflow gas. This results in high yield production of nitride semiconductor devices with a long life and high light-emission efficiency.

Abstract: The present invention relates to an apparatus for producing a nitride semiconductor by crystal-growing the nitride semiconductor on a substrate by diffusing a gas containing a source gas of group III element and a source gas of group V element. The gas is diffused in parallel with the substrate and from upstream to downstream. The apparatus has the substrate housed in the apparatus and a flow channel for allowing the gas to flow in the flow channel. The apparatus also has a plurality of protrusions provided on an inner wall of the flow channel. A partition for causing the source gas of group III element and the source gas of group V element to be introduced separately into the flow channel is provided on the upstream portion of the flow channel and in a horizontal direction. The protrusions are formed on the upper and lower surfaces of the partition. With this structure, the source gas of group III element and the source gas of group V element are more uniformly mixed before the source gases are supplied.

Abstract: Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11.

Abstract: A multi beam track system and method is used for the retrieving of information stored in optical memories like optical disks. The information carrying beams reflected on the surface of such a optical disk results in spots on the surface of a detector array. Because these beams are very close to each other, the resulting spots tend to overlap so that cross talk conditions between neighboring channels occur. As result the S/N ratio becomes worse. According to the present invention a plurality of laser beams arranged in a row is used, where the laser beams are linear polarized and the polarization of neighboring beams differ by 90.o slashed., i.e. neighboring laser beams have perpendicular linear polarization. After reflection on the surface of the optical disk the row of reflected laser beams is separated into two rows by an separating means which is polarization dependent so that beams are separated in space according to the polarization.

Abstract: A thin film according to the present invention which is disclosed herein is an iron and oxygen based perpendicular magnetized anisotropic thin film useful as a magnetic recording material. This thin film has an excellent magnetic anisotropy in the perpendicular direction to the surface thereof and comprises iron (Fe)-oxygen(O) system, and tin (Sn) and/or germanium (Ge) or aluminum (Al) as a third element. The specified examples of such thin films include those having the composition represented by (I) Fe.sub.x O.sub.y M.sub.z wherein M represents Sn and/or Ge, and (II) Fe.sub.x O.sub.y Al.sub.z.The thin film has characteristics optimum as a uniform perpendicular magnetic recording medium, thus making it possible to provide a fine and high-density recording.