Patents by Inventor Nakayama Masatoshi

Nakayama Masatoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High electron mobility transistors with multiple channels
    Patent number: 8624667
    Abstract: A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: January 7, 2014
    Assignee: Mitsubishi Electric Research Laboratories, Inc.
    Inventors: Koon Hoo Teo, Peijie Feng, Chunjie Duan, Toshiyuki Oishi, Nakayama Masatoshi
  • High Electron Mobility Transistors with Multiple Channels
    Publication number: 20130141156
    Abstract: A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel.
    Type: Application
    Filed: August 6, 2012
    Publication date: June 6, 2013
    Inventors: Koon Hoo Teo, Peijie Feng, Chunjie Duan, Toshiyuki Oishi, Nakayama Masatoshi