Abstract: A display device according to an exemplary embodiment includes: a substrate including a display area and a transmission area; a metal blocking layer disposed in the display area of the substrate; an inorganic insulating layer disposed on the metal blocking film; a transistor disposed on the inorganic insulating layer; an emission layer connected to the transistor; and a light blocking layer and a color filter disposed on the emission layer of the display area, wherein the edge of the light blocking layer is protruded toward the transmission area more than the edge of the metal blocking layer.

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

Abstract: The present disclosure relates to a polishing slurry composition and a method of producing the same. The polishing slurry composition according to one embodiment of the present disclosure includes: abrasive particles dispersed so as to have positively-charged particle surfaces; a first dispersant including a nonionic linear polymer; and a second dispersant including an anionic coiling polymer, wherein the polishing slurry composition satisfies the following Expressions 1 and 2: [Expression 1] 4?log(milling energy) <5; and [Expression 2] 20% ?Primary particle size reduction rate (%) <35%.

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.

Abstract: The present invention relates to a novel amino-phenyl-sulfonyl-acetate derivative or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for preventing or treating diabetes comprising the same as an active ingredient.

Abstract: The present invention relates to a novel amino-phenyl-sulfonyl-acetate derivative or a pharmaceutically acceptable salt thereof; and a pharmaceutical composition for preventing or treating diabetes comprising the same as an active ingredient.

Abstract: The present invention relates to a stabilized pemetrexed formulation, and more specifically, to a stabilized pemetrexed formulation comprising acetylcysteine as an antioxidant and sodium citrate as a buffering agent. Additionally, the present invention relates to a pemetrexed formulation filled in a sealed container, comprising pemetrexed or a pharmaceutically acceptable salt thereof as an active ingredient, wherein the oxygen gas content within the headspace of the container is 3 v/v % or less.

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.

Abstract: The present invention relates to a stabilized pemetrexed formulation, and more specifically, to a stabilized pemetrexed formulation comprising acetylcysteine as an antioxidant and sodium citrate as a buffering agent. Additionally, the present invention relates to a pemetrexed formulation filled in a sealed container, comprising pemetrexed or a pharmaceutically acceptable salt thereof as an active ingredient, wherein the oxygen gas content within the headspace of the container is 3 v/v % or less.

Abstract: The present invention relates to a stabilized pemetrexed formulation, and more particularly to a stabilized pemetrexed formulation comprising acetylcysteine as antioxidant and a citrate salt as buffer.

Abstract: The present invention relates to a stabilized pemetrexed formulation, and more particularly to a stabilized pemetrexed formulation comprising acetylcysteine as antioxidant and a citrate salt as buffer.