Patents by Inventor Nakjin Kim

Nakjin Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240179899
    Abstract: A NAND flash device may include a peripheral circuit including a transistor, a substrate, and a device isolation region defining an active region of the substrate. The transistor may include a first gate structure on the active region. The transistor may include source and drain regions extending in a first direction in the active region on both sides of the first gate structure, which may include a first lightly-doped source and drain region adjacent to the first gate structure and a second lightly-doped source and drain region integrally connected thereto. The second lightly-doped source and drain region may be arranged farther from the first gate structure than the first lightly-doped source and drain region. The second lightly-doped source and drain region may have a smaller width in the second direction than a width of the first lightly-doped source and drain region in the second direction.
    Type: Application
    Filed: November 20, 2023
    Publication date: May 30, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hakseon KIM, Nakjin SON, Dongjin LEE, Junhee LIM, Seongsu KIM, Hanmin CHO, Chiwoong HAM
  • Patent number: 8062786
    Abstract: Disclosed herein is a cylindrical secondary battery constructed in a structure in which a crimping region, at which a cap assembly is mounted to the open upper end of a cylindrical container having an electrode assembly mounted therein, is formed at the upper end of the container, wherein the crimping region is constructed in a structure in which the upper end of the crimping region is gently bent at a predetermined radius of curvature (R), such that the crimping region surrounds a gasket located at the inside of the crimping region, the bent front end extends inward, such that the bent end presses the gasket, and an inclination of a predetermined angle is formed at the sidewall of the crimping region, such that the upper part of the crimping region is directed inward. According to the secondary battery of the present invention, the sealability of the gasket is improved, and external impacts are partially absorbed by the inclination formed at the crimping region.
    Type: Grant
    Filed: September 8, 2007
    Date of Patent: November 22, 2011
    Assignee: LG Chem, Ltd.
    Inventors: Sungjong Kim, In Sung Lee, Jaehan Jung, Geun Ho Seo, Dongsub Lee, Munsung Kim, Ji Hyun Lee, Nakjin Kim
  • Publication number: 20100119935
    Abstract: Disclosed herein is a cylindrical secondary battery constructed in a structure in which a crimping region, at which a cap assembly is mounted to the open upper end of a cylindrical container having an electrode assembly mounted therein, is formed at the upper end of the container, wherein the crimping region is constructed in a structure in which the upper end of the crimping region is gently bent at a predetermined radius of curvature (R), such that the crimping region surrounds a gasket located at the inside of the crimping region, the bent front end extends inward, such that the bent end presses the gasket, and an inclination of a predetermined angle is formed at the sidewall of the crimping region, such that the upper part of the crimping region is directed inward. According to the secondary battery of the present invention, the sealability of the gasket is improved, and external impacts are partially absorbed by the inclination formed at the crimping region.
    Type: Application
    Filed: September 8, 2007
    Publication date: May 13, 2010
    Applicant: LG Chem, Ltd. LG Twin Towers
    Inventors: Sungjong Kim, In Sung Lee, Jaehan Jung, Geun Ho Seo, Dongsub Lee, Munsung Kim, Ji Hyun Lee, Nakjin Kim