Patents by Inventor Nalae Lee

Nalae Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240090265
    Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
    Type: Application
    Filed: November 13, 2023
    Publication date: March 14, 2024
    Inventors: Jinsuk Lee, Jin Jeon, Sugwoo Jung, Shinbeom Choi, Youngin Hwang, Byungno Kim, Heeyeon Kim, Kohei EBISUNO, Nalae Lee, Illhwan Lee, Jongmin Lee, Joohyeon Jo, Changha Kwak, Yongseon Jo
  • Patent number: 11864421
    Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: January 2, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jinsuk Lee, Jin Jeon, Sugwoo Jung, Shinbeom Choi, Youngin Hwang, Byungno Kim, Heeyeon Kim, Kohei Ebisuno, Nalae Lee, Illhwan Lee, Jongmin Lee, Joohyeon Jo, Changha Kwak, Yongseon Jo
  • Publication number: 20210265438
    Abstract: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
    Type: Application
    Filed: September 28, 2020
    Publication date: August 26, 2021
    Inventors: Jinsuk Lee, Jin Jeon, Sugwoo Jung, Shinbeom Choi, Youngin Hwang, Byungno Kim, Heeyeon Kim, Kohei EBISUNO, Nalae Lee, Illhwan Lee, Jongmin Lee, Joohyeon Jo, Changha Kwak, Yongseon Jo