Patents by Inventor Nallan C. Padmapani

Nallan C. Padmapani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of NH.sub.3 or SF.sub.6 and HBR and N.sub.2
    Patent number: 5877090
    Abstract: An RIE method and apparatus provides uniform and selective etching through silicon nitride material of a supplied workpiece such as a silicon wafer having silicon oxide adjacent to the SiN. A plasma-maintaining gas that includes N.sub.2 having an inflow rate of at least 10 sccm is used to provide etch-depth uniformity across the workpiece. The plasma-maintaining gas further includes HBr and one or both of NF.sub.3 and SF.sub.6.
    Type: Grant
    Filed: June 3, 1997
    Date of Patent: March 2, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Nallan C. Padmapani, Terry Ko