Patents by Inventor Nam Chil Moon

Nam Chil Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9012979
    Abstract: A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 21, 2015
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Nam Chil Moon
  • Patent number: 8981477
    Abstract: A laterally-diffused metal oxide semiconductor (LDMOS) device and method of manufacturing the same are provided. The LDMOS device can include a drift region, a source region and a drain region spaced a predetermined interval apart from each other in the drift region, a field insulating layer formed in the drift region between the source region and the drain region, and a first P-TOP region formed under the field insulating layer. The LDMOS device can further include a gate polysilicon covering a portion of the field insulating layer, a gate electrode formed on the gate polysilicon, and a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 17, 2015
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Nam Chil Moon
  • Patent number: 8957475
    Abstract: A laterally diffused metal oxide semiconductor (LDMOS) device, and a method of manufacturing the same are provided. The LDMOS device can include a drain region of a bootstrap field effect transistor (FET), a source region of the bootstrap FET, a drift region formed between the drain region and the source region, and a gate formed at one side of the source region and on the drift region.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 17, 2015
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Nam Chil Moon
  • Publication number: 20140264586
    Abstract: A laterally diffused metal oxide semiconductor (LDMOS) device, and a method of manufacturing the same are provided. The LDMOS device can include a drain region of a bootstrap field effect transistor (FET), a source region of the bootstrap FET, a drift region formed between the drain region and the source region, and a gate formed at one side of the source region and on the drift region.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Chil MOON
  • Publication number: 20140264585
    Abstract: A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Chil MOON
  • Publication number: 20140264587
    Abstract: A laterally-diffused metal oxide semiconductor (LDMOS) device and method of manufacturing the same are provided. The LDMOS device can include a drift region, a source region and a drain region spaced a predetermined interval apart from each other in the drift region, a field insulating layer formed in the drift region between the source region and the drain region, and a first P-TOP region formed under the field insulating layer. The LDMOS device can further include a gate polysilicon covering a portion of the field insulating layer, a gate electrode formed on the gate polysilicon, and a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: DONGBU HITEK CO., LTD.
    Inventor: Nam Chil MOON
  • Patent number: 8710587
    Abstract: An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: April 29, 2014
    Assignee: Dongbu HiTek Co., Ltd.
    Inventors: Nam-Chil Moon, Jae-Hyun Yoo, Jong-Min Kim
  • Publication number: 20120292698
    Abstract: An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film.
    Type: Application
    Filed: October 18, 2011
    Publication date: November 22, 2012
    Inventors: Nam-Chil MOON, Jae-Hyun Yoo, Jong-Min Kim
  • Patent number: 8269909
    Abstract: Disclosed is a method for fabrication of a liquid crystal display with improved optical transmission, which includes sequentially forming a first oxide film, a silicon film, and a second oxide film on a semiconductor substrate, selectively etching the silicon film and the second oxide film to expose the first oxide film, forming a oxynitride film on at least the silicon film, forming a polysilicon layer over the oxynitride film, selectively etching the polysilicon layer to form a top electrode, forming an insulating film on and/or over the substrate, including the top electrode, and forming metal wirings on outer regions of the top electrode.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: September 18, 2012
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Nam Chil Moon
  • Publication number: 20100165279
    Abstract: Disclosed is a method for fabrication of a liquid crystal display with improved optical transmission, which includes sequentially forming a first oxide film, a silicon film, and a second oxide film on a semiconductor substrate, selectively etching the silicon film and the second oxide film to expose the first oxide film, forming a oxynitride film on at least the silicon film, forming a polysilicon layer over the oxynitride film, selectively etching the polysilicon layer to form a top electrode, forming an insulating film on and/or over the substrate, including the top electrode, and forming metal wirings on outer regions of the top electrode.
    Type: Application
    Filed: December 21, 2009
    Publication date: July 1, 2010
    Inventor: Nam Chil MOON