Abstract: A power semiconductor device includes a substrate, a first epi layer of a first conductivity type disposed on the substrate, a second epi layer of a first conductivity type disposed on the first epi layer, a first well of a second conductivity type partially disposed in the first epi layer, a second well of a second conductivity type disposed on the second epi layer, an ion implantation region and a source region of the second conductivity type disposed in the second well, a source electrode in the source region, a gate insulating layer in a trench region where a portion of the ion implantation region and the second epi layer is removed, a trench gate disposed on the gate insulating layer, an interlayer insulating layer disposed on the trench gate and a gate electrode electrically connected to the trench gate.

Abstract: The present disclosure relates to reductant injection system and method for a selective catalytic reduction reaction whereby urea is injected directly to an exhaust line where a denitrification reaction occurs without using an additional urea decomposition reactor and, thus, conversion from urea to ammonia can occur very fast.

Abstract: The present disclosure relates to a catalyst for directly decomposing urea, a method for preparing the same and a system for decomposing urea including the same, whereby the efficiency of decomposing urea to ammonia may be improved while preventing the formation of a byproduct such as biuret at temperatures of 200° C. or below by controlling the oxygen composition of the catalyst including titania and ceria.

Abstract: The present disclosure relates to a catalyst for directly decomposing urea, a method for preparing the same and a system for decomposing urea including the same, whereby the efficiency of decomposing urea to ammonia may be improved while preventing the formation of a byproduct such as biuret at temperatures of 200° C. or below by controlling the oxygen composition of the catalyst including titania and ceria.