Abstract: A system provides bi-manual game-based integrative therapy combining cognitive training with mild upper body physical exercising during game play. The system includes a pair of interfaces tracking a user's arms in 3D and detect trigger pressing. Custom therapeutic game controllers that detect grasping force, finger extension, 3D hand position, skin temperature and pulse may be used. Using one of these interfaces the patient plays a series of custom games displayed on a laptop, medical grade workstation, or other computer platform. The whole therapeutic system may be integrated on a medical cart, so to make the system mobile and easier to place in a clinical setting. Games were designed to improve motor control, shoulder strength, finger and arm range of motion, task sequencing, focusing, decision making (executive function), short term and long term visual/auditory memory, and were progressed in difficulty over 6 to 8 weeks of therapy. This therapy reduces depression.

Abstract: Disclosed is a cardiopulmonary resuscitation training apparatus. The cardiopulmonary resuscitation training apparatus comprises: a mannequin; a compression plate which is provided towards the chest area of the mannequin and generates a return force; and a display unit which displays the state of the mannequin and shows blood circulation movement in light-emitting lines, in accordance with the pressing of the compression plate. The display unit can be constituted in such a way that the blood circulation movement in the mannequin is displayed by means of LEDs, and the LED movement rate is varied or the LEDs emit light in different colours in accordance with the depth of pressing or the pressing rate of the compression plate. This gives the advantage that the user can implement cardiopulmonary resuscitation close to reality while being made aware of the compression depth and the compression rate.

Abstract: The present invention relates to a method for providing a route guidance service for visually impaired people, the method comprising the steps of: when a predetermined application is selected through a user input, transmitting a request for a route guidance service together with location information acquired through the GPS of a user terminal simultaneously with execution of the selected application; servicing, by a route guidance server, search path information corresponding to an input destination on the basis of the location information received from the user terminal according to the route guidance service request from the user terminal; broadcasting, by the user terminal, an inquiry signal through a Bluetooth device search request, identifying an earphone by a device which transmits a response signal to the broadcasted inquiry signal, and performing paging with the identified earphone; and recognizing a user's walking direction on the basis of the search path information through outputting a signal by gy

Abstract: Disclosed is an adaptively coupled plasma source having a uniform magnetic field distribution. The adaptively coupled plasma source includes a flat plate shaped bushing disposed above a reaction chamber in a center region of the reaction chamber, a plurality of upper coils extended from the bushing to be disposed above the reaction chamber, so as to spirally surround the bushing, and a plurality of side coils arranged around a sidewall portion of the reaction chamber to surround the reaction chamber.

Abstract: A plasma chamber having a plasma source coil includes a chamber body, a plasma source coil, and an edge bushing. The chamber body includes a reaction space, which is limited by a sidewall, a lower exterior wall, and an upper dome, and forms plasma. The plasma source coil arranged on the dome includes M unit coils corresponding to an integer greater than “2”. The M unit coils having a predetermined rpm value “n” indicative of a positive integer are extended from a center bushing having a predetermined radius at a center part, and are spirally arranged along a circumference of the center bushing, such that the plasma is formed in the reaction space. The edge bushing arranged between the dome of the chamber body and the plasma source coil, and is configured in the form of a cylindrical shape to overlap with an edge of the wafer arranged in the reaction space.

Abstract: A plasma source coil includes a bushing arranged at a center part, and a plurality of unit coils arranged in the form of a concentric circle from a circumference of the bushing on the bases of the bushing. One end of each unit coil and one end of the bushing are commonly connected to a power-supply terminal, and the other end of each unit coil and the other end of the bushing are commonly connected to a ground terminal.

Abstract: Disclosed herein is a plasma source which can create plasma within a reaction chamber to process a semiconductor wafer. The plasma source comprises a bushing equipped at an upper center of the reaction chamber, and a plurality of source coils linearly extending from the bushing to a periphery of the reaction chamber. With the linear source coils, it is possible to prevent deviation in magnetic field from the center to the periphery of the plasma source in the radial direction, resulting in easy control of critical dimensions and uniform etching rate both at the center and periphery of the reaction chamber.

Abstract: There is provided an adaptive plasma source, which is arranged at an upper portion of a reaction chamber having a reaction space to form plasma and is supplied with RF (radio frequency) power from an external RF power source to form an electric field inside the reaction space. The adaptive plasma source includes a conductive bushing and at least two unit coils. The bushing is coupled to the RF power source and arranged at an upper central portion of the reaction chamber. The at least two unit coils are branched from the bushing and surround the bushing in a spiral shape and have the number of turns equal to a×(b/m), where a and b are positive integers and m is the number of the unit coils.

Abstract: A surface light source apparatus (100) includes a main body (105) having a space, and a plurality of space division members (130) being disposed in the space so that the space division members (130) are extended in a first direction and arranged in a second direction spaced apart from one another to divide the space into a plurality of light emitting spaces (112). The space division members (130) include a plurality of connecting holes (132). At least two of the connecting holes (132) have different heights from one another with respect to a bottom surface of the main body (105) to have the light emitting spaces connected to one another through the connecting holes (132). The surface light source apparatus also includes a visible light emitting unit to generate a visible light in the light emitting spaces. Therefore, the brightness-uniformity of the surface light source apparatus and an image display quality of a display device are improved.

Abstract: In a method of manufacturing a surface light source, a plurality of partition walls is formed on a lower substrate. The partition walls generate a first stress in the lower substrate along a first direction. A reflective layer is formed on the lower substrate. The reflective layer generates a second stress in the lower substrate along a second direction. After forming a fluorescent layer on the reflective layer and beneath an upper substrate, the upper and lower substrates are sealed to form discharge spaces between the upper and lower substrates.

Abstract: Provided are a plasma source coil for generating plasma and a plasma chamber using the same. The plasma source coil receives power from a power supplier to generate uniformly plasma in a predetermined reaction space. The plasma source coil includes m (here, m≧2, and m is an integer) unit coils, each of which has a number n of turns (here, n is a positive real number). The unit coils extend from a coil bushing, which is located in the center of the plasma source coil and has a predetermined radius, and are arranged in a spiral shape around the coil bushing.

Abstract: A substrate processing apparatus has a chamber having a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and an exhaust to exhaust the gas. A detector is adapted to detect a first intensity of a first wavelength of a radiation emission from an energized gas in the chamber and generate a first signal in relation to the first intensity and to detect a second intensity of a second wavelength of the radiation emission and generate a second signal in relation to the second intensity. A controller receives the first and second signals from the detector, performs a mathematical operation on the first and second signals to determine a value related to a condition of the chamber, and treats the chamber in relation to the value by providing instructions to operate one or more of the substrate transport, substrate support, gas supply, gas energizer and gas exhaust.

Abstract: We have developed a method of selectively etching silicon nitride relative to oxides in a high density plasma chamber of the kind presently known in the art. We have obtained selectivities for silicon nitride:silicon oxide in the range of about 15:1 to about 24:1. We have employed the method in the etching of silicon nitride spacers for sub 0.25 &mgr;m devices, where the spacers are adjacent to exposed oxides during the etch process. We have obtained silicon nitride spacers having rounded top corners and an extended “tail” toward the bottom outer edge of the nitride spacer. The method employs a plasma source gas which typically includes SF6, HBr, N2 and optionally, O2. Typically, the pressure in the etch chamber during etching is at least 35 mTorr and the substrate temperature is about 20° C. or less.

Abstract: We have developed a method of selectively etching silicon nitride relative to oxides in a high density plasma chamber of the kind presently known in the art. We have obtained selectivities for silicon nitride:silicon oxide in the range of about 15:1 to about 24:1. We have employed the method in the etching of silicon nitride spacers for sub 0.25 &mgr;m devices, where the spacers are adjacent to exposed oxides during the etch process. We have obtained silicon nitride spacers having rounded top corners and an extended “tail” toward the bottom outer edge of the nitride spacer. The method employs a plasma source gas which typically includes SF6, HBr, N2 and optionally, O2. Typically, the pressure in the etch chamber during etching is at least 35 mTorr and the substrate temperature is about 20° C. or less.

Abstract: Disclosed is plasma etching method and apparatus for manufacturing a semiconductor device. The plasma etching apparatus includes a chamber in which a wafer to be etched is loaded, at least one CCD, at least one gas supply unit for supplying etching gases into the chamber; and at least one state control unit. The state control unit comprises a light component extractor, a estimator, a comparator, a controller, and a timer. The plasma etching apparatus also comprises a chamber in which a wafer to be etched is loaded; a first dome sealing an upper end of the chamber; a coil winded on the dome and generation electric field into the chamber; at least one light emission tip disposed through a predetermined portion of the dome, so as to emit light toward the wafer and receive light reflected by the wafer; and a plurality of nozzles, each of which is disposed around light emission tip and through the, predetermined portion of the dome, so as to supply gases into the chamber.

Abstract: The present invention pertains to a method for depositing built-up structures on the surface of patterned masking material used for semiconductor device fabrication. Such built-up structures are useful in achieving critical dimensions in the fabricated device. The composition of the built-up structure to be fabricated is dependant upon the plasma etchants used during etching of underlying substrates and on the composition of the substrate material directly underlying the masking material.

Abstract: A method of etching silicon using a plasma generated from a gas comprising fluorine (F), oxygen (O), hydrogen (H) and carbon (C).

Abstract: A method for etch a tungsten-containing layer (525) on a substrate (510) substantially anisotropically with good etching selectivity with respect to a hard mask layer, and without forming excessive passivating deposits on the etched features. In the method, the substrate (510) is placed in a plasma zone, and process gas mix comprising NF3 and Cl2is introduced into the plasma zone. A plasma is formed from the process gas mix to anisotropically etch the tungsten containing layer (525) to produce patterned tungsten features (535).

Abstract: A substrate processing apparatus has a chamber having a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and an exhaust to exhaust the gas. A detector is adapted to detect a first intensity of a first wavelength of a radiation emission from an energized gas in the chamber and generate a first signal in relation to the first intensity and to detect a second intensity of a second wavelength of the radiation emission and generate a second signal in relation to the second intensity. A controller receives the first and second signals from the detector, performs a mathematical operation on the first and second signals to determine a value related to a condition of the chamber, and treats the chamber in relation to the value by providing instructions to operate one or more of the substrate transport, substrate support, gas supply, gas energizer and gas exhaust.

Abstract: The method of present invention etches a layer of polysilicon formed on a substrate disposed within a substrate processing chamber. The method flows an etchant gas including sulfur hexafluoride, an oxygen source and a nitrogen source into the processing chamber and ignites a plasma from the etchant gas to etch the polysilicon formed over the substrate. In a preferred embodiment, the etchant gas consists essentially of SF6, molecular oxygen (O2) and molecular nitrogen (N2). In a more preferred embodiment the etchant gas includes a volume ratio of molecular oxygen to the sulfur hexafluoride of between 0.5:1 and 1:1 inclusive and a volume ratio of the sulfur hexafluoride to molecular nitrogen of between 1:1 and 4:1 inclusive. In an even more preferred embodiment, the volume ratio of O2 to sulfur hexafluoride is between 0.5:1 and 1:1 inclusive and the volume ratio of sulfur hexafluoride to N2 is between 1.5:1 and 2:1 inclusive.