Abstract: Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.

Abstract: An inspection apparatus is provided. The inspection apparatus includes a substrate extending in a first direction and a second direction perpendicular to the first direction, a receiver antenna arranged on the substrate and including first and second antenna electrodes, a first waveguide on the substrate, and a second waveguide on the substrate, wherein the first antenna electrode overlaps the first waveguide in a third direction that is perpendicular to the first direction and the second direction, and the second antenna electrode overlaps the second waveguide in the third direction.

Abstract: According to embodiments, a cantilever is provided. The cantilever includes a first conductive line, a second conductive line, and a third conductive line extending on the substrate, a microtip arranged on the substrate, and an emitter antenna arranged on the microtip, connected to the first to third conductive lines, and configured to produce a scattering signal of a terahertz wave band, wherein the emitter antenna includes a first emitter electrode connected to the first conductive line, a second emitter electrode connected to the second conductive line and adjacent to the first emitter electrode, a third emitter electrode connected to the third conductive line and spaced apart from the first emitter electrode with the second emitter electrode in-between, and a scattering part connecting the first and second emitter electrodes with each other.

Abstract: A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.

Abstract: A hybrid probe includes a probe body including a wiring and extending in a first direction; and a probe tip coupled to the probe body and including a first antenna, a second antenna, and an isolation layer. The hybrid probe may operate in a reflection mode using the first antenna and the second antenna, and operate in a transmission mode using the second antenna.

Abstract: A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

Abstract: Provided is a probe configured to detect a near field, the probe including a probe substrate having a tip region at an end portion of the probe substrate, a width of the tip region being less than a width of a remaining region of the probe substrate, a first electrode and a second electrode disposed on a surface of the probe substrate, the first electrode and the second electrode being spaced apart from each other and extending from the tip region along the probe substrate, an emitter and a detector disposed between the first electrode and the second electrode, the emitter and the detector being spaced apart from each other in a direction in which the probe substrate extends, and being configured to be photo switched, and a reflector disposed above the emitter and the detector in the direction in which the probe substrate extends opposite to the tip region, and configured to reflect an electromagnetic wave emitted from the emitter.

Abstract: Provided is a probe configured to detect a near field, the probe including a probe substrate having a tip region at an end portion of the probe substrate, a width of the tip region being less than a width of a remaining region of the probe substrate, a first electrode and a second electrode disposed on a surface of the probe substrate, the first electrode and the second electrode being spaced apart from each other and extending from the tip region along the probe substrate, an emitter and a detector disposed between the first electrode and the second electrode, the emitter and the detector being spaced apart from each other in a direction in which the probe substrate extends, and being configured to be photo switched, and a reflector disposed above the emitter and the detector in the direction in which the probe substrate extends opposite to the tip region, and configured to reflect an electromagnetic wave emitted from the emitter.

Abstract: A near-field detection system includes include an electric field generator configured to apply an electric field to an analysis sample, a probe configured to detect a near field that has passed through the analysis sample, a current detector connected to the probe, and a laser system irradiating a laser to each of the electric field generator and the probe. The probe includes a cantilever substrate, an antenna electrode on the cantilever substrate, an electromagnetic wave blocking layer exposing a sensing region of the cantilever substrate, the electromagnetic wave blocking layer including a conductive material, and an insulating layer interposed between the cantilever substrate and the electromagnetic wave blocking layer such that the insulating layer is between the antenna electrode and the electromagnetic wave blocking layer.

Abstract: A semiconductor substrate processing apparatus includes: a metastructure layer divided into a plurality of microstructures by grooves, a light-transmitting dielectric substrate that supports the plurality of microstructures and is configured to allow an electromagnetic wave to be transmitted therethrough, and a frame including an exhaust hole configured to receive gas introduced from the grooves such as to provide suction force to the semiconductor substrate, wherein each of the plurality of microstructures has a smaller width than a wavelength of the electromagnetic wave, and each of the grooves has a smaller width than the wavelength of the electromagnetic wave.

Abstract: A hybrid probe includes a probe body including a wiring and extending in a first direction; and a probe tip coupled to the probe body and including a first antenna, a second antenna, and an isolation layer. The hybrid probe may operate in a reflection mode using the first antenna and the second antenna, and operate in a transmission mode using the second antenna.

Abstract: An inspection apparatus includes a measurement device disposed to be spaced apart from an upper surface of a wafer, an image capturing device configured to capture an image of at least a portion of the measurement device and at least a portion of the upper surface of the wafer, a memory storing an algorithm to measure a distance between the measurement device and the upper surface of the wafer based on the image, and a controller configured to measure the distance between the measurement device and the upper surface of the wafer based on the algorithm, wherein the image includes a measurement region in which the measurement device is displayed, a wafer region in which the wafer is displayed, and a reflective region in which the measurement device being reflected on the upper surface of the wafer is displayed, and wherein the wafer region and the reflective region overlap with each other.

Abstract: A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.

Abstract: Provided are a composition for adhesion, a stacked structure including the same, and an electronic device including the same. The composition for adhesion may include an acrylic resin and a silane compound. The acrylic resin may have a weight average molecular weight of about 100,000 g/mol to about 200,000 g/mol, and may include a polymerization unit derived from a monomer represented by Formula A1 and a polymerization unit derived from a monomer represented by Formula A2. The silane compound may have a weight average molecular weight of about 300 g/mol to about 2,000 g/mol, and a polymerization unit derived from a monomer represented by Formula B.

Abstract: Provided are a composition for adhesion, a stacked structure including the same, and an electronic device including the same. The composition for adhesion may include an acrylic resin and a silane compound. The acrylic resin may have a weight average molecular weight of about 100,000 g/mol to about 200,000 g/mol, and may include a polymerization unit derived from a monomer represented by Formula A1 and a polymerization unit derived from a monomer represented by Formula A2. The silane compound may have a weight average molecular weight of about 300 g/mol to about 2,000 g/mol, and a polymerization unit derived from a monomer represented by Formula B.

Abstract: A method for applying a patterned coating of resist onto a surface of a substrate, includes embossing flowable resist at least once, wherein the flowable resist is respectively embossed between a patterned surface of a stamp and a carrier, whereby the stamp surface is provided with a patterned resist surface. The stamp carrying a first patterned part of the resist coating and the carrier carrying a second part of the resist coating are separated from each other. The patterned resist coating is transferred, wherein the first patterned part of the resist coating on the surface of the stamp is pressed against the surface of the substrate and the patterned resist coating is transferred onto the surface of the substrate. The first patterned part of the resist coating is cured and a demolding step is performed by separating the stamp from the first patterned part of the resist coating.

Abstract: A method for replicating a pattern, comprising: (a) providing a patterned template comprising a patterned template surface having a plurality of recessed or protruded areas formed therein; (b) contacting a volume of a curable perfluoropolyether composition [composition (C)] with the patterned template surface, the composition C comprising: at least one functional perfluoropolyether compound [compound (E)] which comprises a (per)fluoropolyoxyalkylene chain [chain (Rf)], wherein the molecular weight of the chain Rf is more than 1000 and less than 3500, and at least two unsaturated moieties; and at least one photoinitiator; (c) submitting to UV radiations the composition (C) to yield a mold comprising a patterned mold surface, and separating the mold from the patterned template; (d) contacting the patterned mold surface with a (pre)polymer composition [composition (P)]; (e) processing the composition (P) to yield an article having a patterned surface, and separating the article from the mold.

Abstract: A method for applying a patterned coating of resist onto a surface of a substrate, includes embossing flowable resist at least once, wherein the flowable resist is respectively embossed between a patterned surface of a stamp and a carrier, whereby the stamp surface is provided with a patterned resist surface. The stamp carrying a first patterned part of the resist coating and the carrier carrying a second part of the resist coating are separated from each other. The patterned resist coating is transferred, wherein the first patterned part of the resist coating on the surface of the stamp is pressed against the surface of the substrate and the patterned resist coating is transferred onto the surface of the substrate. The first patterned part of the resist coating is cured and a demolding step is performed by separating the stamp from the first patterned part of the resist coating.