Abstract: The present disclosure relates to a simulation apparatus for secondary battery production.

Abstract: A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second gate structures include a second gate electrode that surrounds the second sheet pattern. A first source/drain recess is between adjacent first gate structures. A second source/drain recess is between adjacent second gate structures. A first source/drain pattern extends along the first source/drain recess. A first silicon germanium filling film is on the first silicon germanium liner. A second source/drain pattern includes a second silicon germanium liner extending along the second source/drain recess. A second silicon germanium filling film is on the second silicon germanium liner.

Abstract: A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.

Abstract: A semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.

Abstract: A semiconductor device includes a substrate including a first region and a second region, a first active pattern on the first region, a first gate structure having a first width in the first direction, on the first active pattern, a first epitaxial pattern disposed in the first active pattern on a side surface of the first gate structure, a second active pattern on the second region, a second gate structure having a second width greater than the first width in the first direction, on the second active pattern and a second epitaxial pattern disposed in the second active pattern on a side surface of the second gate structure. Each of the first epitaxial pattern and the second epitaxial pattern includes silicon germanium (SiGe), and a first Ge concentration of the first epitaxial pattern is lower than a second Ge concentration of the second epitaxial pattern.

Abstract: Wireless communication equipment includes a communication interface, a memory, and a processor electrically connected with the communication interface and the memory. The processor is configured to activate communication of the wireless communication equipment, to scan an external device for a network connection at a periphery of the wireless communication equipment, using the communication interface, to receive information including a mesh ID sent from the external device, using the communication interface, and to configure a mesh network with the external device by using the communication interface, when a designated string stored in the memory is included in the mesh ID.

Abstract: A scroll compressor to prevent reverse flow of refrigerant and reducing flow noise. The scroll compressor efficiently distribute refrigerant suctioned into the scroll compressor to a compression chamber and a drive unit. The scroll compressor includes a main body, a fixed scroll fixedly installed in the main body, an orbiting scroll configured to engage with the fixed scroll and perform a relative orbiting motion, and to form a compression chamber with the fixed scroll, a partition plate disposed above the fixed scroll to separate an inside of the main body into a low-pressure portion and a high-pressure portion, a first check valve installed at a discharge port of the fixed scroll to open and close the discharge port, and a second check valve installed on the partition plate to open and close an opening allowing communication between the low-pressure portion and the high-pressure portion.

Abstract: Wireless communication equipment includes a communication interface, a memory, and a processor electrically connected with the communication interface and the memory. The processor is configured to activate communication of the wireless communication equipment, to scan an external device for a network connection at a periphery of the wireless communication equipment, using the communication interface, to receive information including a mesh ID sent from the external device, using the communication interface, and to configure a mesh network with the external device by using the communication interface, when a designated string stored in the memory is included in the mesh ID.

Abstract: Wireless communication equipment includes a communication interface, a memory, and a processor electrically connected with the communication interface and the memory. The processor is configured to activate communication of the wireless communication equipment, to scan an external device for a network connection at a periphery of the wireless communication equipment, using the communication interface, to receive information including a mesh ID sent from the external device, using the communication interface, and to configure a mesh network with the external device by using the communication interface, when a designated string stored in the memory is included in the mesh ID.

Abstract: Disclosed is a scroll compressor capable of preventing reverse flow of refrigerant and reducing flow noise. The scroll compressor efficiently distribute refrigerant suctioned into the scroll compressor to a compression chamber and a drive unit. The scroll compressor includes a main body, a fixed scroll fixedly installed in the main body, an orbiting scroll configured to engage with the fixed scroll and perform a relative orbiting motion, and to form a compression chamber with the fixed scroll, a partition plate disposed above the fixed scroll to separate an inside of the main body into a low-pressure portion and a high-pressure portion, a first check valve installed at a discharge port of the fixed scroll to open and close the discharge port, and a second check valve installed on the partition plate to open and close an opening allowing communication between the low-pressure portion and the high-pressure portion.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: A semiconductor device includes a first fin type pattern on a substrate, a second fin type pattern, parallel to the first fin type pattern, on the substrate, and an epitaxial pattern on the first and second fin type patterns. The epitaxial pattern may include a shared semiconductor pattern on the first fin type pattern and the second fin type pattern. The shared semiconductor pattern may include a first sidewall adjacent to the first fin type pattern and a second sidewall adjacent to the second fin type pattern. The first sidewall may include a first lower facet, a first upper facet on the first lower facet and a first connecting curved surface connecting the first lower and upper facets. The second sidewall may include a second lower facet, a second upper facet on the second lower facet and a second connecting curved surface connecting the second lower and upper facets.

Abstract: Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

Abstract: A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

Abstract: Wireless communication equipment includes a communication interface, a memory, and a processor electrically connected with the communication interface and the memory. The processor is configured to activate communication of the wireless communication equipment, to scan an external device for a network connection at a periphery of the wireless communication equipment, using the communication interface, to receive information including a mesh ID sent from the external device, using the communication interface, and to configure a mesh network with the external device by using the communication interface, when a designated string stored in the memory is included in the mesh ID.

Abstract: Wireless communication equipment includes a communication interface and a processor electrically connected to the communication interface. The processor is configured to set an operation mode of the wireless communication equipment to a router mode or an extender mode, based on a selection of a user of the wireless communication equipment, to configure a network connection such that the wireless communication equipment operates in the router mode, when the operation mode is set to the router mode, and to configure the network connection such that the wireless communication equipment operates in one of a plurality of sub modes included in the extender mode based at least partly on a first connection state between the wireless communication equipment and an external device or a second connection state between the wireless communication equipment and user equipment, when the operation mode is set to the extender mode.

Abstract: A compressor includes a discharge guide provided to communicate a discharge port and a bypass port to a discharge cover so that refrigerant discharged from the discharge port and the bypass port is guided to the discharge cover and a middle-pressure chamber formed by the fixed scroll, the back-pressure cover, and the discharge guide. The compressor according to the embodiments guarantees the space in which the bypass valve can be installed by a discharge guide mounted to a discharge portion of the fixed scroll, and at the same time forms the middle pressure portion, resulting in efficiency improvement of the compressor. The compressor according to the embodiments reduces noise and vibration generated from the discharge portion of the fixed scroll by the discharge guide.

Abstract: Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.